
Allicdata Part #: | IPD90N04S405ATMA1TR-ND |
Manufacturer Part#: |
IPD90N04S405ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 86A TO252-3-313 |
More Detail: | N-Channel 40V 86A (Tc) 65W (Tc) Surface Mount PG-T... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 30µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3-313 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2960pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 86A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 86A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD90N04S405ATMA1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is an electronic device that can control the flow of electricity without being directly connected to the power source. The IPD90N04S405ATMA1 is a single N-Channel enhancement mode MOSFET, specifically, as opposed to multiple N-Channel FETs (N-FETs) or bidirectional, P-type and N-type field effect transistors. This MOSFET is based on a trench process and has an optimized gate threshold voltage for use with low-voltage, high switching applications.
The IPD90N04S405ATMA1 has a wide range of applications and is ideal for a variety of low voltage and high switching applications. It can operate with a low gate drive voltage, ensuring higher efficiency and lower power consumption. It is also used in power supplies and motor circuit control, providing excellent electrical characteristics as well as high speed switching capability even in a low voltage environment.
The working principle of the IPD90N04S405ATMA1 is based on the electrostatic potential that the gate terminal creates across the channel. When the voltage on the gate terminal is higher than the channel potential, current is able to flow through the channel, turning the device on. Conversely, when the voltage on the gate terminal is lower than the channel potential, current flow is stopped and the device is off.
The IPD90N04S405ATMA1 is also able to handle large current in the on state, making it suitable for power switching applications. For example, it can be used to control motors with the gate connected to a gate driver designed to control the voltage applied to the device. The device also allows for the easy design of power supplies, as it can turn on and off quickly and has a low gate threshold voltage.
In addition to power switching and motor control, the IPD90N04S405ATMA1 can also be used in applications such as high frequency switching, power amplifiers, and AC/DC converters. The device has high speed switching capability which makes it ideal for high frequency applications and can handle high current densities without failure. The low gate threshold voltage also makes it ideal for AC/DC converters, as it is able to accurately control the flow of power.
The IPD90N04S405ATMA1 is an ideal device for a variety of low voltage, high switching applications. It can operate from a low gate drive voltage, ensuring high efficiency and lower power consumption. It is also capable of handling large current in the on state and is suitable for power switching, motor control, and high frequency switching. Additionally, the low voltage gate threshold voltage makes it suitable for AC/DC converters, power amplifiers, and a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
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