
FDB86566-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDB86566-F085TR-ND |
Manufacturer Part#: |
FDB86566-F085 |
Price: | $ 0.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 110A D2PAK |
More Detail: | N-Channel 60V 110A (Tc) 176W (Tj) Surface Mount D²... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.88000 |
10 +: | $ 0.85360 |
100 +: | $ 0.83600 |
1000 +: | $ 0.81840 |
10000 +: | $ 0.79200 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 176W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6655pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDB86566-F085 is a single N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is used for Smart Grid applications and is designed to help increase the efficiency of power systems. The device is an ideal solution for controlling large currents in applications such as power control, motor control, and portable power.
The FDB86566-F085 MOSFET has a very low resistance and a low on-state voltage drop. This ensures that power losses are minimal. Additionally, it features gate-controlled switching capabilities and temperature compensation, which make it one of the best options for applications that require precise control. The device also includes a built-in fault protection circuitry, which helps prevent damage to the system.
The FDB86566- F085 MOSFET has a max gate-source voltage of 20V. This allows for control of higher power levels than possible with other MOSFETs. Additionally, the device has an exceptionally low on-state resistance of 4.5 mΩ. This reduces the power losses even further.
The FDB86566-F085 MOSFET works on the principle of current flow through a MOSFET. The source, body, and drain of the device are made up of three terminals. A voltage applied to the Gate (G) terminal controls the flow of electrical current from the source (S) to the drain (D) terminals. When the gate voltage is high, the current is allowed to flow freely, allowing the applications to operate.
The FDB86566-F085 is perfect for switching power in applications that require high efficiency and reliability. It is also suitable for applications that require precise control and require a low on-state resistance. The device is designed for use in industrial, automotive, and consumer applications.
The FDB86566-F085 is a highly efficient, cost-effective solution for controlling large currents in Smart Grid applications. It provides precise control of currents, and its low on-state resistance helps to reduce energy losses. Additionally, its built-in fault protection and temperature compensation features ensure that it can handle adverse conditions without any damage.
The specific data is subject to PDF, and the above content is for reference
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