FDB075N15A-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDB075N15A-F085TR-ND |
Manufacturer Part#: |
FDB075N15A-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 110A D2PAK |
More Detail: | N-Channel 150V 110A (Tc) 333W (Tc) Surface Mount D... |
DataSheet: | FDB075N15A-F085 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 333W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5595pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDB075N15A-F085 is a Field-Effect Transistor (FET) that is designed for use in various specialized applications. It is a single-gate, N-channel, Enhancement-Mode, MOSFET which utilizes a Complementary Gate Structure for improved efficiency and temperature stability. The FDB075N15A-F085 is used in a variety of applications, including power management, automotive, and industrial systems.
The device is constructed using a monolithic structure comprising four layers of silicon, which are then coupled together using a gold/aluminium composite. This helps to increase the efficient transfer of electrons between layers and improve the overall performance. As well as providing the FET with superior thermal stability, this structure also allows it to be used in applications that have higher power requirements.
The FDB075N15A-F085 is capable of operating at peak voltage ratings up to 120 Volts. It has been designed to be used at high frequencies, with a maximum frequency limit set at 65 MHz. This makes the device ideal for use in applications where a high switching speed is required. The device is also capable of handling currents up to 7 amps, making it suitable for both digital and analog circuits.
The working principle of this FET is based on the principle of electrostatic attraction and repulsion. The gate acts as a gate terminal, and when a voltage is applied between it and the source, it attracts the electrons from the channel, thus creating a channel between the drain and the source. The width of this channel is directly proportional to the voltage applied to the gate. When the gate voltage is increased, the amount of current that can flow through the channel is also increased, and vice versa.
The FDB075N15A-F085 is used in a variety of scenarios, including power management, automotive, and industrial systems. It can be used as part of a motor control circuit, for example, to control the amount of current passing through the motor. It can also be used in load switching applications, such as in a television set where it can be used to switch between different input signals.
The FDB075N15A-F085 is a key component in many applications where high efficiency and reliability are essential. It offers excellent performance, and its monolithic structure ensures that its temperature stability is maximized.
The specific data is subject to PDF, and the above content is for reference
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