NVMFS5113PLWFT1G

The NVMFS5113PLWFT1G is a single-die PowerTrench® MOSFET from Fairchild Semiconductor. It is a Single N-Channel Power MOSFET that offers high switching speeds, low on-state Rds (on) resistance, and fast & symmetrical switching characteristics within the automotive temperature range. The device has a maximum drain source breakdown voltage (VDS) of 55 volts, an Rds(on) of 0.0178 ohm, a maximum gate charge of 12.4nC, and a maximum continuous drain current (ID) of 14 amps. It is specified for operation from -55°C to 150°C junction temperature.

The device is designed primarily for automotive applications, as well as many other applications such as low voltage, low power switched mode power supplies, heating, motor drives, medical equipment, surveillance systems, LED lighting, and power conversion. With a wide range of gate charge, Rds(on) values, and drain source breakdown voltages available in the PowerTrench family, the NVMFS5113PLWFT1G is ideal for applications requiring a fast switching device with low power consumption.

Working Principle

The NVMFS5113PLWFT1G is a field-effect transistor (FET) designed to switch large amounts of current with hardly any significant voltage drop across its terminals. This is accomplished through the device’s highly efficient design. The basic concept of the FET is the movement of electrons in a semiconductor material between the source and drain terminals. The flow of electrons is controlled by a field effect, which is generated by a voltage applied to the base (gate). By controlling the amount of voltage applied to the gate, the current that flows between the source and drain terminals can be switched on and off.

The NVMFS5113PLWFT1G features low capacitance design and low gate-source charge, helping to reduce switching times and improve control over the circuit. The device also offers low Rds(on), providing less voltage drop across the device and increasing efficiency for improved power delivery. With a wide range of drain-to-source breakdown voltages and gate charge values, the NVMFS5113PLWFT1G is an ideal solution for a wide range of automotive and other applications.

Conclusion

The NVMFS5113PLWFT1G is a single-die PowerTrench® MOSFET from Fairchild Semiconductor. It is a Single N-Channel Power MOSFET designed for automotive applications and other power control applications such as low voltage, low power switched mode power supplies, heating, motor drives, medical equipment, surveillance systems, LED lighting, and power conversion. The device offers fast switching speeds, low on-state Rds (on) resistance, and fast & symmetrical switching characteristics within the automotive temperature range. It has a maximum drain-source breakdown voltage (VDS) of 55 volts, an Rds(on) of 0.0178 ohm, and a maximum continuous drain current (ID) of 14 amps. It is an efficient solution for a wide range of automotive and other applications.