NVMFS5C426NWFAFT1G

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The NVMFS5C426NWFAFT1G is a single N-channel silicon MOSFET designed to provide high level signal/power switch performance in a variety of applications. This device is optimized in its on-state resistance (RDS(on)), gate charge (Qg) and transconductance (gm) for high level switching performance, and power efficiency.

The NVMFS5C426NWFAFT1G device has an advanced trench structure and a proprietary gate edge process to reduce gate charge and the output capacitance (Coss). This device also features an excellent dv/dt rating and fast switching with low capacitive coupling.

In terms of application field, for instance, the NVMFS5C426NWFAFT1G is suitable for high speed Power Switching applications. They can be used to switch loads up to several amperes in 12V or 24V applications. They are also suitable for systems requiring low on-state resistance and minimal power dissipation. In addition, they can be used in battery disconnect applications, in automotive systems, and in DC-DC converters.

The NVMFS5C426NWFAFT1G performs its functions by allowing current to flow or stop flowing when a gate voltage is applied. When a positive gate voltage is applied, current can flow through the device and when the gate voltage is removed, current flow stops. This is an example of field-effect transistor (FET) technology. This type of transistor device is used in the vast majority of digital integrated circuits, current digital circuits, and analog circuit applications.

The NVMFS5C426NWFAFT1G is well suited for applications requiring low RDS(on) , low gate charge, and excellent dv/dt rating. Additionally, it is also suitable for power switching operations requiring high speed, minimal power loss, and minimal capacitance.

In terms of working principle, the NVMFS5C426NWFAFT1G device is mechanically a FET. It is an electronic device with an insulated gate. It is an example of a 3-terminal transistor that uses a gate to control the current that can flow between its source and drain. The NVMFS5C426NWFAFT1G device is a voltage controlled device, which means that the voltage applied to the gate-electrode determines the current that can flow between source and drain. The higher the applied voltage, the greater the current.

When the gate voltage is below its threshold voltage, the MOSFET is not conducting. When the gate voltage equals or exceeds its threshold voltage, the MOSFET is switched on, allowing current to flow from its source to its drain. The amount of current that can flow is determined by the voltage applied to the gate-electrode. Additionally, the threshold voltage is not a fixed value, but is instead determined by the maximum drain-to-source offset voltage that the MOSFET can withstand.

In addition to controlling the current that passes between source and drain, the NVMFS5C426NWFAFT1G device also has additional interesting characteristics. For example, it has a low output capacitance, which makes it suitable for high frequency operations, and it has a record low on-state resistance, which makes it suitable for switching high currents with low power dissipation.

In conclusion, the NVMFS5C426NWFAFT1G single N-channel silicon MOSFET is suitable for a variety of applications requiring high level signal/power switch performance, high speed and low power operation, and minimal power dissipation. Its patented technology enables it to have low on-state resistance, low output capacitance, and a high dv/dt rating, making it an excellent choice for applications requiring fast switching and high efficiency devices.

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