![STW27NM60ND Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 497-10086-5-ND |
Manufacturer Part#: |
STW27NM60ND |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21A TO-247 |
More Detail: | N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 10.5A, 10V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±25V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Series: | Automotive, AEC-Q101, FDmesh™ II |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW27NM60ND is a dual n-channel MOSFET that’s mainly used in low power, bidirectional switching and linear applications. It has a low on-resistance channel with superior thermal characteristics that make it ideal for use in consumer electronics and power converters. This makes it a great choice for applications where power efficiency, size and weight is of the utmost importance.
The STW27NM60ND has a maximum drain-source voltage of 500V, a maximum drain current of 25A and a maximum gate-source voltage of ±20V. Its current-voltage characteristic is linear and it has a low gate-charge. This makes it suitable for use in switching applications as well as linear applications such as linear regulators, motor controls and pulse-width modulation (PWM) converters.
The STW27NM60ND\'s working principle is based on the principle of "resistance modulation". This process involves controlling the resistance between two terminals – the drain and the source – by varying the amount of current flowing through the channel. By doing this, the gate-source voltage can be used to accurately regulate the resistance between the drain and source. The STW27NM60ND\'s low gate-charge helps to reduce the amount of time it takes to adjust the resistance and thereby improve efficiency.
The STW27NM60ND also incorporates current sensing and temperature protection features, making it suitable for use in a wide range of applications including consumer electronics, automotive, LED lighting, LED displays, and computer applications. In addition, the STW27NM60ND features improved durability, allowing it to withstand overloads and overvoltages without sacrificing performance.
The STW27NM60ND is capable of operating at 850V drain-source voltage and 25A drain current, which makes it well suited for use in a variety of industries. Its low RDS(on) (3mΩ) and low gate-charge (24nC) make it highly efficient, enabling it to maximize savings when used in power converters. Furthermore, its temperature protection functionality ensures that the MOSFET is protected from overheating, leading to a longer life and better performance.
In conclusion, the STW27NM60ND is an excellent choice for a wide range of applications due to its low on-resistance channel, superior thermal characteristics and protective features. Its ability to handle high drain-source voltage and drain current makes it ideal for use in power converters, while its low gate-charge and temperature protection features make it suitable for use in consumer electronics and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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