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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IXTQ120N15T-ND	IXTQ120N15T	IXYS	View more Series: PolarHT Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	30+: $2.9994
RFP30P05-ND	RFP30P05	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 170nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
IXKH47N60C-ND	IXKH47N60C	IXYS	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 650nC @ 10V Vgs (Max): 20V FET Feature: Super Junction Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXKH) Package / Case: TO-247-3	1000 Order	--
APT25SM120S-ND	APT25SM120S	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25C: 25A (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Chassis Mount Supplier Device Package: D3 Package / Case: D-3 Module	1000 Order	1+: $0
64-0055PBF-ND	64-0055PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole	1000 Order	1+: $0
497-5168-5-ND	STW30N20	STMicroelectronics	View more Series: STripFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $0
TPCC8009LQ(O-ND	TPCC8009,LQ(O	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 24A (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 10V Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
2N6768-ND	2N6768	Microsemi Corporation	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	1000 Order	--
APT15F50K-ND	APT15F50K	Microsemi Corporation	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 15A (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power Dissipation (Max): 223W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 [K] Package / Case: TO-220-3	1000 Order	1+: $0
PH4030AL,115-ND	PH4030AL,115	Nexperia USA Inc.	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669, 4-LFPAK	1000 Order	1+: $0
NDS8435TR-ND	NDS8435	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IXFR12N100-ND	IXFR12N100	IXYS	View more Series: HiPerFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	1+: $0
CDM2206-800LRSL -ND	CDM2206-800LR S L	Central Semiconductor Corp	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V Vgs (Max): 30V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	885 Order	1+: $1.2159 50+: $0.9799 100+: $0.8819 500+: $0.6859 1000+: $0.5683
NDF0610-ND	NDF0610	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	1000 Order	1+: $0
AO4407BL-ND	AO4407BL	Alpha & Omega Semiconductor Inc.	View more Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13 mOhm @ 12A, 20V Vgs(th) (Max) @ Id: 2.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	1000 Order	--
IRFP460P-ND	IRFP460P	Vishay Siliconix	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	1000 Order	1+: $0
917-1131-2-ND	EPC2033	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 31A (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	8500 Order	500+: $3.5374
RFP40N10-ND	RFP40N10	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 20V Vgs (Max): 20V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
917-1151-2-ND	EPC2031	EPC	View more Series: eGaN Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 31A (Ta) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Operating Temperature: -40C ~ 150C (TJ)	5500 Order	500+: $2.8299
SSM6J511NULFTR- ND	SSM6J511NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	6000 Order	3000+: $0.098
STD22NF06AG-ND	STD22NF06AG	STMicroelectronics	View more Series: STripFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 23A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 50V Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.2206
DMJ70H1D3SJ3-ND	DMJ70H1D3SJ3	Diodes Incorporated	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 351pF @ 50V Power Dissipation (Max): 41W (Tc) Operating Temperature: -55C ~ 155C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	75+: $0.5883
1727-7624-2-ND	PMCM4401UNEZ	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Power Dissipation (Max): 400mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-WLCSP (2x2) Package / Case: 4-XFBGA, WLCSP	9000 Order	9000+: $0.0801
NDB7060LTR-ND	NDB7060L	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
RFG40N10-ND	RFG40N10	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 300nC @ 20V Vgs (Max): 20V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	1000 Order	1+: $0
AON6532P-ND	AON6532P	Alpha & Omega Semiconductor Inc.	View more Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 710mV @ 1A Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Power Dissipation (Max): 35.5W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount	1000 Order	--
TK50E06K3AS1X(S -ND	TK50E06K3A,S1X( S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
TK40E10K3S1X(S- ND	TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $1.1157
NVGS3443T1GOSTR -ND	NVGS3443T1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	1000 Order	3000+: $0.1157
RFD10P03LSM-ND	RFD10P03LSM	ON Semiconductor	View more Packaging: Tube Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPD50R3K0CEAUMA 1TR-ND	IPD50R3K0CEAUMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 30A Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Power Dissipation (Max): 26W (Tc)	1000 Order	1+: $0.11
IXKR40N60C-ND	IXKR40N60C	IXYS	View more Series: CoolMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): 20V FET Feature: Super Junction Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247 Package / Case: ISOPLUS247	1000 Order	--
NDB7050TR-ND	NDB7050	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
NDB7050LTR-ND	NDB7050L	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
FDM100-0045SP-N D	FDM100-0045SP	IXYS	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC Package / Case: i4-Pac-5	1000 Order	1+: $0
IRF1902GPBF-ND	IRF1902GPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
2N7228U-ND	2N7228U	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	1000 Order	1+: $0
IRLU9343PBF-ND	IRLU9343PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	6525+: $0.3613
NTMFS4965NFT1G- ND	NTMFS4965NFT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17.5A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	1000 Order	1500+: $0.9455
2N6764-ND	2N6764	Microsemi Corporation	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): 20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	1000 Order	1+: $0

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