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 --2997 Item(s) In Category:Transistors - Bipolar (BJT) - Single, Pre-Biased

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Photo Allicdata Part# Mft.Part# Company Spec. QTY. Pricing(USD) PDF
DTA143EET1 DTA143EET1-ND DTA143EET1 ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
 Base Part Number: DTA143
1000
Order

1+:

$0

 DTA143EET1-ND Datasheet
UNR5111G0L UNR5111G0LTR-ND UNR5111G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: SMini3-F2
1000
Order

1+:

$0

 UNR5111G0LTR-ND Datasheet
UNR9119G0L UNR9119G0LTR-ND UNR9119G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR9119G0LTR-ND Datasheet
DTB143ECHZGT116 DTB143ECHZGT116
TR-ND		 DTB143ECHZGT116 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 500mA
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
3000
Order

3000+:

$0.0259

 DTB143ECHZGT116TR-ND Datasheet
DTA023JUBTL DTA023JUBTLTR-N
D		 DTA023JUBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 5mA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
1000
Order

--

 DTA023JUBTLTR-ND Datasheet
PDTC115EM,315 1727-3031-2-ND PDTC115EM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 20mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTC115
1000
Order

10000+:

$0.0212

 1727-3031-2-ND Datasheet
UNR221200L UNR221200LTR-ND UNR221200L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
Order

1+:

$0

 UNR221200LTR-ND Datasheet
UNR921KG0L UNR921KG0LTR-ND UNR921KG0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
Order

1+:

$0

 UNR921KG0LTR-ND Datasheet
RN2103CT(TPL3) RN2103CT(TPL3)T
R-ND		 RN2103CT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 20V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 50mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
Order

1+:

$0

 RN2103CT(TPL3)TR-ND Datasheet
PDTA143XE,135 PDTA143XE,135-N
D		 PDTA143XE,135 NXP USA Inc
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75
 Base Part Number: PDTA143
1000
Order

1+:

$0

 PDTA143XE,135-ND Datasheet
DRC9114Y0L DRC9114Y0LTR-ND DRC9114Y0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3-B
 Base Part Number: DRC9114
1000
Order

--

 DRC9114Y0LTR-ND Datasheet
DTB123EKFRAT146 DTB123EKFRAT146
TR-ND		 DTB123EKFRAT146 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 500mA
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 2.2 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SMT3
1000
Order

3000+:

$0.0583

 DTB123EKFRAT146TR-ND Datasheet
DTC143ECAHZGT116 DTC143ECAHZGT11
6TR-ND		 DTC143ECAHZGT11
6		 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 350mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
Order

3000+:

$0.0186

 DTC143ECAHZGT116TR-ND Datasheet
NSVMMUN2217LT1G NSVMMUN2217LT1G
-ND		 NSVMMUN2217LT1G ON Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 246mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SOT-23-3 (TO-236)
1000
Order

6000+:

$0.0393

 NSVMMUN2217LT1G-ND Datasheet
UNRF2A100A UNRF2A100ATR-ND UNRF2A100A Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: ML3-N2
1000
Order

10000+:

$0.0729

 UNRF2A100ATR-ND Datasheet
DTA114EUBTL DTA114EUBTLTR-N
D		 DTA114EUBTL ROHM Semiconductor
View more  Packaging: Tape & Reel (TR)
 Part Status: Not For New Designs
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 50mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
 Base Part Number: DTA114
1000
Order

--

 DTA114EUBTLTR-ND Datasheet
PDTA124XM,315 1727-3021-2-ND PDTA124XM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTA124
1000
Order

10000+:

$0.0209

 1727-3021-2-ND Datasheet
NSVDTA144WET1G NSVDTA144WET1G-
ND		 NSVDTA144WET1G ON Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-75, SOT-416
 Supplier Device Package: SC-75, SOT-416
1000
Order

6000+:

$0.0388

 NSVDTA144WET1G-ND Datasheet
UNR421300A UNR421300ATB-ND UNR421300A Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: NS-B1
 Supplier Device Package: NS-B1
1000
Order

1+:

$0

 UNR421300ATB-ND Datasheet
DTA124ESATP DTA124ESATP-ND DTA124ESATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 30mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTA124
1000
Order

1+:

$0

 DTA124ESATP-ND Datasheet
DTC124ESATP DTC124ESATP-ND DTC124ESATP ROHM Semiconductor
View more  Packaging: Tape & Box (TB)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 30mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 300mW
 Mounting Type: Through Hole
 Package / Case: SC-72 Formed Leads
 Supplier Device Package: SPT
 Base Part Number: DTC124
1000
Order

1+:

$0

 DTC124ESATP-ND Datasheet
UNR5118G0L UNR5118G0LTR-ND UNR5118G0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 510 Ohms
 Resistor - Emitter Base (R2): 5.1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: SMini3-F2
1000
Order

1+:

$0

 UNR5118G0LTR-ND Datasheet
DTC114EUBHZGTL DTC114EUBHZGTLT
R-ND		 DTC114EUBHZGTL ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 100mA
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-85
 Supplier Device Package: UMT3F
1000
Order

--

 DTC114EUBHZGTLTR-ND Datasheet
PDTC123YM,315 PDTC123YM,315-N
D		 PDTC123YM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTC123
1000
Order

10000+:

$0.0209

 PDTC123YM,315-ND Datasheet
PDTA144WM,315 1727-3029-2-ND PDTA144WM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTA144
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 1727-3029-2-ND Datasheet
DDTA143XE-7-F DDTA143XE-FDITR
-ND		 DDTA143XE-7-F Diodes Incorporated
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-523
 Supplier Device Package: SOT-523
 Base Part Number: DDTA143
1000
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 DDTA143XE-FDITR-ND Datasheet
UNR211H00L UNR211H00LTR-ND UNR211H00L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: Mini3-G1
1000
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 UNR211H00LTR-ND Datasheet
UNR311100L UNR311100LTR-ND UNR311100L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 80MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SSSMini3-F1
1000
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 UNR311100LTR-ND Datasheet
UNR921AG0L UNR921AG0LTR-ND UNR921AG0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 100 kOhms
 Resistor - Emitter Base (R2): 100 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3
1000
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 UNR921AG0LTR-ND Datasheet
DRC9113Z0L DRC9113Z0LTR-ND DRC9113Z0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 10 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3-B
 Base Part Number: DRC9113
1000
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 DRC9113Z0LTR-ND Datasheet
DTC143ECAT116 DTC143ECAT116TR
-ND		 DTC143ECAT116 ROHM Semiconductor
View more  Series: *
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 250MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
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 DTC143ECAT116TR-ND Datasheet
RN2109MFV,L3F RN2109MFVL3F-ND RN2109MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
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8000+:

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 RN2109MFVL3F-ND Datasheet
PDTA114YU,115 PDTA114YU,115-N
D		 PDTA114YU,115 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 10 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 100mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: SC-70, SOT-323
 Supplier Device Package: SOT-323-3
 Base Part Number: PDTA114
1000
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3000+:

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 PDTA114YU,115-ND Datasheet
PDTC124XM,315 1727-3040-2-ND PDTC124XM,315 Nexperia USA Inc.
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 22 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 1A
 Power - Max: 250mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: DFN1006-3
 Base Part Number: PDTC124
1000
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10000+:

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 1727-3040-2-ND Datasheet
NSVDTA123JM3T5G NSVDTA123JM3T5G
-ND		 NSVDTA123JM3T5G ON Semiconductor
View more  Series: Automotive, AEC-Q101
 Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 260mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SOT-723
1000
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8000+:

$0.032

 NSVDTA123JM3T5G-ND Datasheet
DRC9A43E0L DRC9A43E0L-ND DRC9A43E0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 4.7 kOhms
 Resistor - Emitter Base (R2): 4.7 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 125mW
 Mounting Type: Surface Mount
 Package / Case: SC-89, SOT-490
 Supplier Device Package: SSMini3-F3-B
 Base Part Number: DRA9A
1000
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6000+:

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 DRC9A43E0L-ND Datasheet
UNR32AEG0L UNR32AEG0LTR-ND UNR32AEG0L Panasonic Electronic Components
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 22 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
 Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
 Current - Collector Cutoff (Max): 500nA
 Frequency - Transition: 150MHz
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: SSSMini3-F1
1000
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1+:

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 UNR32AEG0LTR-ND Datasheet
RN1104ACT(TPL3) RN1104ACT(TPL3)
TR-ND		 RN1104ACT(TPL3) Toshiba Semiconductor and Storage
View more  Packaging: Tape & Reel (TR)
 Part Status: Obsolete
 Transistor Type: NPN - Pre-Biased
 Current - Collector (Ic) (Max): 80mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 47 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA
 Current - Collector Cutoff (Max): 500nA
 Power - Max: 100mW
 Mounting Type: Surface Mount
 Package / Case: SC-101, SOT-883
 Supplier Device Package: CST3
1000
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1+:

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 RN1104ACT(TPL3)TR-ND Datasheet
RN2105MFV,L3F RN2105MFVL3F-ND RN2105MFV,L3F Toshiba Semiconductor and Storage
View more  Part Status: Active
 Transistor Type: PNP - Pre-Biased
 Current - Collector (Ic) (Max): 100mA
 Voltage - Collector Emitter Breakdown (Max): 50V
 Resistor - Base (R1): 2.2 kOhms
 Resistor - Emitter Base (R2): 47 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA
 Current - Collector Cutoff (Max): 100nA (ICBO)
 Power - Max: 150mW
 Mounting Type: Surface Mount
 Package / Case: SOT-723
 Supplier Device Package: VESM
1000
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1+:

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 RN2105MFVL3F-ND Datasheet
DTD113ECHZGT116 DTD113ECHZGT116
TR-ND		 DTD113ECHZGT116 ROHM Semiconductor
View more  Series: Automotive, AEC-Q101
 Packaging: Tape & Reel (TR)
 Part Status: Active
 Transistor Type: NPN - Pre-Biased + Diode
 Current - Collector (Ic) (Max): 500mA
 Resistor - Base (R1): 1 kOhms
 Resistor - Emitter Base (R2): 1 kOhms
 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
 Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
 Frequency - Transition: 200MHz
 Power - Max: 200mW
 Mounting Type: Surface Mount
 Package / Case: TO-236-3, SC-59, SOT-23-3
 Supplier Device Package: SST3
1000
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3000+:

$0.0228

 DTD113ECHZGT116TR-ND Datasheet
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