PDTC143TE,115 Allicdata Electronics
Allicdata Part #:

568-2161-2-ND

Manufacturer Part#:

PDTC143TE,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 150MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC143TE,115 datasheetPDTC143TE,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Base Part Number: DTC143
Description

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Transistors are semiconductor devices that can be used to control the flow of electrical signals. Bipolar junction transistors (BJTs) are one type of transistor commonly used in many electronic circuits. Single, pre-biased transistors are an important subset of BJTs that have a number of important uses in circuit designs. The PDTC143TE,115 is an example of a single, pre-biased transistor. This article will discuss the application field and working principle of this type of transistor.

Application Field for PDTC143TE,115

The PDTC143TE,115 is a common type of single, pre-biased transistor used in many types of image sensors, optical readers, and other applications that require wide common base voltage range. This type of transistor is also frequently used in electronic circuits such as amplifiers, oscillators, switching circuits, and other applications. Due to its wide range of application, the PDTC143TE,115 is well-suited for a number of different circuit designs.

Working Principle

Single, pre-biased transistors such as the PDTC143TE,115 work by allowing current to flow between two different junctions. This type of transistor has an embedded base-emitter junction as well as a separate collector-base junction. The combination of these two junctions create a forward bias current flow from the emitter to the collector. This allows the transistor to dissipate power in a very efficient manner.

The PDTC143TE,115 is designed to work with a wide range of base voltages, making it ideal for a variety of applications. It has an operating range of 0.4V to 9V and an on-state current range of -1.2mA to +1.6mA. This wide range of operating range allows the PDTC143TE,115 to be used in a variety of different circuits.

Conclusion

The PDTC143TE,115 is an example of a common type of single, pre-biased transistor. This type of transistor has a wide range of applications and has an operating range of 0.4V to 9V and an on-state current range of -1.2mA to +1.6mA. As a result, it is well-suited for use in many types of electronic circuit designs.

The specific data is subject to PDF, and the above content is for reference

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