Allicdata Part #: | 2N7000RLRPG-ND |
Manufacturer Part#: |
2N7000RLRPG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 200MA TO-92 |
More Detail: | N-Channel 60V 200mA (Ta) 350mW (Tc) Through Hole T... |
DataSheet: | 2N7000RLRPG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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2N7000RLRPG is a field-effect transistor (FET) manufactured by the renowned semiconductor manufacturer, ON Semiconductor. It is a type of single MOSFET. The 2N7000RLRPG has gained widespread popularity among electronics engineers for its performance in switching operations at voltages up to 500V. In this article, the application field and working principle of the 2N7000RLRPG are discussed in detail.The 2N7000RLRPG is widely used in a variety of applications such as solenoid valve control, motor control, HVAC systems, power supplies, oven control, and many others. It is especially well-suited for power management applications, as it can switch high voltages with ease and consume very low power. It is also suitable for RF signal switching and logic control. The device\'s high performance, reliability and excellent signal-carrying capabilities make it an ideal choice for many applications.The 2N7000RLRPG operates as a voltage-controlled device. Its gate input is connected to the source and can be used to control the flow of electrons between the drain and the source. When a voltage is applied to the gate, it controls the conductivity of the channel between the drain and the source. The higher the voltage applied to the gate, the greater the conductivity of the channel and the higher the current that can be drawn from the drain. In this way, the 2N7000RLRPG is able to regulate the current flow through the load.The device is highly efficient, drawing less than 1mV at the gate level when its drain is supplying a current. It features low input capacitance and high switching speed, with a rising and falling time of 15ns and 25ns, respectively. The device\'s output voltage capability is up to 500V, which makes it very suitable for high-voltage applications.All in all, the 2N7000RLRPG is a versatile, high-performance MOSFET device that can be used in a number of different applications. It is highly reliable, efficient and easy to use. The device\'s excellent performance, reliability and ease of use make it an ideal choice for engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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