2SK2034TE85LF

Vgs(th) (Max) @ Id:	--
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	100mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8.5pF @ 3V
Vgs (Max):	10V
Series:	--
Rds On (Max) @ Id, Vgs:	12 Ohm @ 10mA, 2.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The 2SK2034TE85LF is a single Insulated Gate Bipolar Transistor (IGBT). An IGBT is essentially two components in one package - a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and a bipolar Junction Transistor (BJT). This combination allows for the device to provide higher switching speeds, higher efficiency, and better temperature performance than either the MOSFET or BJT on their own. This device is a 600V N-channel MOSFET with an integrated 800V BJT that supports a load of 10A. The 2SK2034TE85LF is designed for automotive, industrial and consumer applications.The basic principle of operation for an IGBT is similar to a MOSFET, in that the voltage applied to the gate determines the resistance of the channel. Unlike a MOSFET, however, the gate is isolated from the rest of the device, which allows for higher voltage control. Also, the gate voltage is not limited to a single voltage, as it is with a MOSFET, but can be varied over a range of gate voltages which allows for a smoother control of the channel. Additionally, the IGBT has a higher current capacity than a traditional MOSFET.When the voltage is applied to the gate of the 2SK2034TE85LF, electrons are attracted to the gate, forming an electrically conductive channel between the source and the drain. This causes the current to flow between the source and the drain. The greater the gate voltage, the more electrons are attracted and the lower the resistance of the channel, resulting in increased current flow. This makes the 2SK2034TE85LF ideal for applications requiring high speed switching and high efficiency.Additionally, the 2SK2034TE85LF has a forced air-cooled design, meaning that it can dissipate heat faster than traditional MOSFETs and other IGBTs. This feature allows for a longer lifespan and improved overall performance.The 2SK2034TE85LF is well-suited for a variety of applications, including AC and DC motor control, power switching and industrial power control, uninterruptible power supply systems, and other industrial applications. It is also ideal for applications requiring high-current switching, such as TFT LCDs, LED backlight control, and other power conversion applications.In conclusion, the 2SK2034TE85LF is a single IGBT that is well-suited for a variety of applications. It provides improved switching speed, higher efficiency, and better temperature performance than a traditional MOSFET or BJT. The device also has a forced air-cooling design, allowing for an extended lifespan and improved overall performance. The 2SK2034TE85LF is an ideal choice for industrial and consumer applications, such as AC and DC motor control, power switching and industrial power control, and uninterruptible power supply systems.

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