Allicdata Part #: | 2SK3820-DL-E-ND |
Manufacturer Part#: |
2SK3820-DL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 26A SMP-FD |
More Detail: | N-Channel 100V 26A (Ta) 1.65W (Ta), 50W (Tc) Surfa... |
DataSheet: | 2SK3820-DL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | SMP-FD |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.65W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The 2SK3820-DL-E is a single field effect transistor (FET) used for a range of power management and switching applications. It is a part of the FET family commonly known as MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors). In addition to its excellent power efficiency, this type of transistor has several unique features that make it very desirable in a variety of applications.
The 2SK3820-DL-E is a three-pin, surface-mount FET which can handle high current and power in a very small size. It has an industry-standard SOT-23 package and a maximum working frequency of 35MHz with a maximum continuous drain current of 9A, making it a great choice for all sorts of power applications. Furthermore, it has a low on-resistance (RDS) and high switch speed (20V/ns) making it a reliable option for high frequency and high power circuits.
The 2SK3820-DL-E’s operation is based on a three-pin Gate-Source-Drain configuration where it allows for a maximum voltage of 20V between the Gate and the Source. When a voltage greater than the pull-in voltage is applied to the Gate, the FET turns on, allowing current to flow from the Source to the Drain. As the voltage between the Gate and the Source is decreased, the FET turns off and the current flow is stopped. Thus, by controlling the voltage between the Gate and the Source, one can control the Drain-Source current. This is why it is used for switching and power management applications.
The 2SK3820-DL-E is widely used in power switching applications and other areas relying on power management. For example, it is commonly found in power supplies, switch mode power supplies, and solar energy systems. Additionally, it may be used in power conversion applications to accurately control fast switching of the voltage in a circuit. Because the 2SK3820-DL-E is very efficient in these switching applications, it can help increase the efficiency of a circuit’s overall power management and reduce power losses.
The 2SK3820-DL-E is a great option for both consumer and industrial applications. Its size and frequency can be scaled for different power levels and voltage, providing reliable performance for a variety of projects. In addition, it has a high level of power efficiency and low power losses, making it an ideal choice for power management, power conversion, and switching projects.
The specific data is subject to PDF, and the above content is for reference
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