Allicdata Part #: | 2SK3827-ND |
Manufacturer Part#: |
2SK3827 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 40A TO-220 |
More Detail: | N-Channel 100V 40A (Ta) 1.75W (Ta), 60W (Tc) Throu... |
DataSheet: | 2SK3827 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SK3827 is a silicon N-Channel power MOS transistor manufactured by Toshiba, commonly used in power and audio amplification applications. The device has a small physical size and low on-resistance overall, making it ideal for high-frequency switching applications. The device is also capable of operating at a wide range of drain-source voltage (VDS) and drain current levels, making it versatile and suitable for a wide range of applications.
The 2SK3827 is a depletion type metal-oxide-semiconductor field-effect transistor (MOSFET), typically used to switch high-current loads with relatively low draining source voltages. It is commonly used in power and audio amplifiers, as well as other switching applications, including switching power supplies, DC-DC converters, and remote control receivers.
The 2SK3827 is designed for operation in environments of up to 250 degrees Celsius, making it suitable for a wide range of environments. The device provides excellent performance in terms of switching performance, efficiency, and reliability. All of this is enabled by the unique combination of the highly advanced Toshiba silicon technology and the internally optimized package design.
The working principle of the 2SK3827 is relatively straightforward. The device utilizes a current flowing between the source and drain terminals to provide an output current. The amount of current allowed to flow is regulated by the gate voltage. When the gate voltage is low, the transistor is off, and no current can flow. When the gate voltage is high, the transistor is on, and current can flow through the device. The level of current that is allowed to flow is determined by the resistance of the channel between the source and drain terminals.
The 2SK3827 is ideally suited for use in high-frequency switching applications and in heavy-current applications. It is capable of carrying large drain-source voltages and when combined with its low on-resistance, makes it ideal for use in applications such as motor control, switching power supplies, DC-DC converters, and audio and power amplifiers.
The device also offers excellent switching performance and reliability, thanks to its unique combination of Toshiba\'s advanced silicon processing technology and package design. This makes the device highly efficient and reliable in a wide range of environments, including those that are exposed to high-temperature and harsh environmental conditions. The device is also very easy to use, making it an ideal choice for both enthusiasts and professionals alike.
In conclusion, the 2SK3827 is a N-Channel MOSFET from Toshiba which is used in a wide range of applications. It has a low on-resistance and can handle large drain-source voltages, making it suitable for use in high-frequency switching as well as high-current loads. The device also has excellent switching performance and durability, thanks to its advanced silicon processing technology and package design.
The specific data is subject to PDF, and the above content is for reference
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