
Allicdata Part #: | 2SK4094-1E-ND |
Manufacturer Part#: |
2SK4094-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 100A TO220-3 |
More Detail: | N-Channel 60V 100A (Ta) 1.75W (Ta), 90W (Tc) Throu... |
DataSheet: | ![]() |
Quantity: | 100 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.75W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12500pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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2SK4094-1E is a single-channel depletion-mode field-effect transistor (FET) which belongs to the MOSFET family. It is a member of 2SK4094 series from Toshiba Semiconductor. This series includes both n-channel and high-voltage n-channel MOSFETs that operate in depletion mode for various high voltage applications.
The 2SK4094-1E series is designed for use in switch mode power supply, motor control, and power supply boost applications. It is suitable for use in high voltage applications such as AC adapters, industrial motors, audio power amplifiers, and other voltage regulator circuits. The series offers low on-resistance, low capacitance Miller plateau, high efficiency, and fast switching speeds.
The 2SK4094-1E chip is an n-channel MOSFET, which means that its drain and source terminals are connected to the substrate. This type of field effect transistor has a gate terminal that controls the conduction of the device. An external voltage is applied to the gate to control the current that flows between the drain and source. A positive voltage applied to the gate will cause the device to conduct, while a negative voltage will cause the device to turn off. As the voltage applied to the gate is varied, the current flowing between the drain and source is also varied.
The drain-source breakdown voltage (VDSS) of the 2SK4094-1E is 500V, and its maximum drain-source on-state resistance (RDS(on)) is 2.8Ω. The on-state drain current (ID) is -40A at a gate-source voltage (VGS) of -10V. The maximum gate-source cut-off voltage (VGS(off)) is -20V, and its gate-source threshold voltage (Vth) is -3V. It has a channel temperature of −20 to 150°C. The device is available in a TO-220 package.
The 2SK4094-1E device is designed to be used in switch mode power supplies. It can be used to regulate the voltage and current in a power supply circuit by controlling the voltage applied to the gate. It is important to note that the device has a gate-source cutoff voltage which must be taken into consideration when used in power supply applications. In addition, it is important to ensure that the gate voltage does not exceed the device’s maximum VGS before it is damaged or destroyed.
The 2SK4094-1E is also used in motor control and power supply boost applications. It is ideal for use in applications where high-speed switching is required, such as brushless DC motor control, switching power supply, and solar battery power supply. The low on-state resistance and fast switching speeds of the device make it ideal for these applications. The device can also be used in audio power amplifiers, as its high efficiency ensures clean and noise-free audio output.
The 2SK4094-1E is an efficient, high voltage MOSFET that is suitable for use in switch mode power supply, motor control, and power supply boost applications. It features low on-resistance, low capacitance Miller plateau, and fast switching speed. With its wide range of applications, the 2SK4094-1E is an ideal choice for designers looking for a high-performance, dependable field-effect transistor.
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