Allicdata Part #: | 2SK4126-ND |
Manufacturer Part#: |
2SK4126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 15A TO-3PB |
More Detail: | N-Channel 650V 15A (Ta) 2.5W (Ta), 170W (Tc) Throu... |
DataSheet: | 2SK4126 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tray |
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The 2SK4126 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) that is mainly used in power control applications. The 2SK4126 has low on-state resistance, fast gate charge, and low gate charge, which makes it an ideal choice for switching power supplies and other electronics applications. It is also suitable for use in many other applications, including motor control, lighting, AC inverters, and high-power DC-DC converters.
A MOSFET is an efficient and versatile type of semiconductor device that can be used for high-power and high-frequency switch applications. It utilizes a substrate of semiconductor material, such as silicon, and has a metallic oxide layer on it. The oxide layer acts as an electrically insulating layer between the source and drain regions of the device, allowing current flow in one direction only. The 2SK4126 is designed as a vertical DMOS (double-diffused metal-oxide-semiconductor) FET (field-effect transistor), allowing it to be used in applications where a large current needs to be switched on or off quickly.
The working principle of the 2SK4126 is very similar to that of other MOSFETs. It is based on the fact that when a voltage is applied to the gate electrode, a field of electrons is created at the interface between the substrate and the oxide layer. This field affects the mobility of the electrons, allowing them to flow from the source to the drain. As the voltage applied to the gate increases, the number of electrons that can flow from the source to the drain also increases. The drain current is then directly proportional to the gate-source voltage, which is known as the “transfer characteristic” of the device.
The 2SK4126 is a single N-channel enhancement-mode MOSFET, meaning that it will conduct current when it is turned on, but will not conduct current when it is turned off. It is designed to have low on-state resistance, allowing it to handle high currents when needed. Additionally, the device has a fast gate charge and a low gate charge, which makes it suitable for use in fast-switching applications.
The 2SK4126 is a versatile device that is useful in a wide range of applications. It is commonly used in power control applications, such as switching power supplies and motor control, as well as in lighting, AC inverters, and high-power DC-DC converters. The fast switching speed of the device makes it an ideal choice for these types of applications. Additionally, the low on-state resistance and low gate charge of the 2SK4126 make it suitable for use in applications that require high efficiency and power density.
In summary, the 2SK4126 is a power MOSFET that is commonly used in high-power and high-frequency switch applications. It has low on-state resistance, fast gate charge, and low gate charge, making it well-suited for use in power control applications, such as switching power supplies and motor control. Furthermore, the fast switching speed and low gate charge of the device make it suitable for applications that require high efficiency and power density.
The specific data is subject to PDF, and the above content is for reference
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