2SK4177-DL-1E Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263-2
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	80W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	380pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	37.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	13 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	1500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The 2SK4177-DL-1E is a type of field-effect transistor (FET), more specifically a n-channel Metal Oxide Semiconductor FET (MOSFET), which is used in a variety of applications. A MOSFET is a type of transistor that works by creating a conductive path between two terminals, the source and the drain, by applying an electric field to a gate terminal. This is in contrast to a traditional bipolar transistor, which works by creating a current between its emitter and collector terminals.MOSFETs are used in lower-voltage systems and are highly efficient in their use of energy. They are often used as switches in digital circuits because of their small size and ability to control large amounts of current. The 2SK4177-DL-1E is a low voltage MOSFET and is capable of controlling currents up to 8 A. This makes it ideal for applications such as relays and motor control.The 2SK4177-DL-1E has a maximum voltage of 30 V, which makes it ideal for operating low voltage circuits. Its small size also makes it suitable for space-limited applications. Additionally, it is capable of operating at temperatures up to 175°C which makes it useful in high temperature environments.The 2SK4177-DL-1E has a very low on-resistance, which means that it requires very little power to turn it on. This makes it efficient and helps to prevent the FET from overheating. In addition, it has a low input capacitance, which helps to reduce switching losses in the circuit.The working principle of the 2SK4177-DL-1E is very simple. When no voltage is applied to the gate terminal, the FET is in its off state and the source and drain terminals are isolated from each other. When a voltage is applied to the gate terminal, the FET is in its on state, and a current flows between the source and drain terminals. This current can be controlled by adjusting the gate voltage.In summary, the 2SK4177-DL-1E is a type of MOSFET with a low voltage and high current capacity, making it ideal for applications such as motor control and relays. Its low on-resistance and low input capacitance make it efficient and reliable. By applying a voltage to the gate terminal, the FET can be switched on and off and the current can be controlled by adjusting the gate voltage.

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