Allicdata Part #: | 2SK4124-1E-ND |
Manufacturer Part#: |
2SK4124-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 20A |
More Detail: | N-Channel 500V 20A (Ta) 2.5W (Ta), 170W (Tc) Throu... |
DataSheet: | 2SK4124-1E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 46.6nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 170W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P-3L |
Package / Case: | TO-3P-3, SC-65-3 |
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2SK4124-1E is one of the most popular FET transistors in the market today. It is a single-channel MOSFET transistor and is used in many applications. This article will provide an overview of the application field and working principle of 2SK4124-1E.
2SK4124-1E is mainly used to amplify signal and current. It is commonly used in digital circuits, such as power amplifiers, pre-amplifiers, headphone amplifiers, and other audio applications. It has also been used in automotive and military applications, due to its efficiency and robustness. This transistor is also used in radiofrequency (RF) circuits, and in switching and voltage regulation circuits. It is known for its high frequency performance and wide-band capabilities, and is able to handle high levels of power.
The working principle of 2SK4124-1E is based on the field effect transistor (FET) architecture. FET technology is comprised of a semiconductor material, an input terminal (or gate) and two output terminals (or source and drain). The transistor is formed within the semiconductor material, with the main components being a source, drain and gate. The gate is connected to the input voltage and the source and drain are connected to the output voltage. The operation of the MOSFET is then controlled by the input voltage, with the output voltage being determined by the difference between the input voltage and the substrate voltage.
When the voltage at the gate is higher than the substrate voltage, the MOSFET conducts current, allowing current to flow between the source and the drain. This current is determined by the magnitude of the voltage difference between the gate and the substrate voltage, known as the Transconductance. As the gate voltage increases, so does the Transconductance, allowing more current to flow through the transistor. This promotes efficient signal transmission, as well as power amplification.
The main advantage of 2SK4124-1E is that it is able to amplify signals in a wide range of frequencies, making it well suited for audio applications. It is also able to handle significant levels of power, making it a great option for audio amplification and switching circuits. Furthermore, 2SK4124-1E is highly efficient, due to its FET architecture, ensuring that power is not wasted in heat generation.
In conclusion, 2SK4124-1E is one of the most popular transistors today due to its wide range of applications in a variety of fields. It is a single-channel MOSFET transistor, which is capable of amplifying signals in a wide range of frequencies and handling large levels of power. Its FET architecture allows for efficient operation and waste-less power generation. It has already been used in a number of automotive and military applications, as well as in audio and RF circuits.
The specific data is subject to PDF, and the above content is for reference
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