Allicdata Part #: | 2SK4066-1E-ND |
Manufacturer Part#: |
2SK4066-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 100A |
More Detail: | N-Channel 60V 100A (Ta) 1.65W (Ta), 90W (Tc) Throu... |
DataSheet: | 2SK4066-1E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.65W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12500pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 220nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A FET, or a field-effect transistor, is an essential component used to control the current in electronic circuits. Among FETs, the 2SK4066-1E is a popular model that is often used in telecommunications and other advanced applications. While it looks much like a silicon transistor, the 2SK4066-1E has some key differences and advantages that make it the preferred choice in certain applications.
The 2SK4066-1E is an n-channel enhancement-mode MOSFET, and is implanted with a vertical double diffused MOS transistor, as well as resistor protection chips. It is built by Toshiba, and is known for its high gain and higher packing density, making it an ideal choice for high-frequency switching applications such as amplifiers.
The 2SK4066-1E has a drain current of 7.8A, a drain-source voltage of 200V, an on-state resistance of 77 milliohms, and a gate-source voltage of ±15V. All of these characteristics, combined with its low gate charge, make it a highly-efficient device.
The 2SK4066-1E can be used in all types of digital and analog circuits, but is most often used in telecommunications and audio systems, where its high-frequency switching makes it extremely useful. For example, it is often used as a power amplifier in cell phone base stations, and as a switching device for GSM modems. It can also be used in motor control circuits, where its high current rating makes it ideal for driving high-power loads.
The working principle of the 2SK4066-1E is based on the electric field generated between the gate and the source. When a voltage is applied to the gate, it attracts electric charge carriers, which are electron holes, towards the source. This causes a change in the electric field, which then modifies the path of current flow in the drain region, thus regulating the output current.
The 2SK4066-1E has a wide range of applications and offers many advantages, making it one of the most popular FETs on the market. It is highly reliable, has an excellent performance, and can be used in high-frequency switching applications. It is also highly efficient, and its low gate charge makes it ideal for use in power control circuits. With its many advantages, 2SK4066-1E can reliably provide the control and regulation required in the most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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