BLF1046,135

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BLF1046,135 transistors, also known as lateral double polysilicon Field Effect Transistors (FETs), are used in different applications and have a working principle which makes them ideal for RF (Radio Frequency) applications. These transistors are capable of providing high-frequency and high-gain performance while maintaining low current drain.

BLF1046,135 transistors are a type of FETs that offer lateral double polysilicon gate construction and feature a high frequency and power rating. As compared to traditional FETs, BLF1046,135 has a greater electron mobility, Ciss and Coss. These transistors have a breakdown voltage of 25V, gate capacitance of 35pF and Vdss of 10V.

The BLF1046,135 is widely used for its high frequency and power capabilities in many applications, such as Oscillators, Mixers, Amplifiers and Automotive Electronics. In addition, this transistor is also used for other applications, such as Microwave Frequency Regulators, Power Supplies, Audio Components and RF Transceivers.

The working principle of BLF1046,135 transistor is based on the concept of Voltage Controlled Field Effect Transistor (VCTFET) whereby the current flowing through a channel is controlled by the voltage applied to the gate. The transistor works by letting a current flow between the drain and the source depending on the applied voltage to the gate. The drain current is determined by the voltage at the gate. When the voltage at the gate is raised, the current flow increases and when the voltage is reduced, the current decreases.

The BLF1046,135 is a great transistor for various RF applications due to the wide frequency range it is capable of handling, ranging from 1MHz to 4GHz. Moreover, this transistor features a number of other high performance benefits such as low power consumption, high gain, low noise figure and good linearity. All these features make BLF1046,135 transistors an ideal choice for RF applications.

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