Allicdata Part #: | BLF10H6600PSU-ND |
Manufacturer Part#: |
BLF10H6600PSU |
Price: | $ 147.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 20.8DB SOT539B |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 1.3A 860... |
DataSheet: | BLF10H6600PSU Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 133.72000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 20.8dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 250W |
Voltage - Rated: | 110V |
Package / Case: | SOT539B |
Supplier Device Package: | SOT539B |
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BLF10H6600PSU is a type of field-effect transistor (FET), more specifically a metal-oxide semiconductor field-effect transistor (MOSFET). The BLF10H6600PSU is specifically designed for RF (radio frequency) applications, making it ideal for use in radios, televisions, cell phones, and other types of communication devices. The BLF10H6600PSU has fast switching speeds, high input/output impedance, and low noise levels. These features make the BLF10H6600PSU a popular choice for many types of RF applications.
A field-effect transistor, such as the BLF10H6600PSU, works by controlling the current flow of electrons between two terminals, the source and drain. When the voltage applied to the gate (control input) is increased, the number of free electrons in the semiconductor material surrounding the gate increases, resulting in a current flow between the source and drain. The amount of current that passes through the transistor is proportional to the gate voltage applied, and can be adjusted by changing the gate voltage.
A RF MOSFET like the BLF10H6600PSU has several advantageous characteristics that make it desirable for use in radio frequency applications. MOSFETS are generally more efficient than BJTs (Bipolar Junction Transistors), which means that less energy is wasted in the form of heat. MOSFETS also have faster switching speeds than BJTs, making them ideal for use in high frequency circuits. Additionally, MOSFETS have a very high impedance, so they can be used in circuits with high input/output impedances.
The BLF10H6600PSU is used in a wide variety of RF applications, including radios, scanning receivers, television tuners, cell phone transceivers, remote control systems, and wireless audio systems. The BLF10H6600PSU is highly efficient and reliable, making it a popular choice for these types of applications. Additionally, the BLF10H6600PSU is extremely small, making it easy to include in many types of circuit designs.
In conclusion, the BLF10H6600PSU is a type of metal-oxide semiconductor field-effect transistor that was specifically designed for radio frequency applications. It has several advantageous characteristics, such as high efficiency, fast switching speeds, and high input/output impedances. The BLF10H6600PSU is commonly used in a variety of RF applications, such as radios, scanning receivers, television tuners, cell phone transceivers, remote control systems, and wireless audio systems.
The specific data is subject to PDF, and the above content is for reference
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