Allicdata Part #: | BLF10H6600PU-ND |
Manufacturer Part#: |
BLF10H6600PU |
Price: | $ 147.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 20.8DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 1.3A 860... |
DataSheet: | BLF10H6600PU Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 133.72000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 20.8dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 250W |
Voltage - Rated: | 110V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
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The BLF10H6600PU is a wireless RF transistor designed to deliver superior performance in a variety of wireless systems such as 915 MHz ISM band radios, 802.11 WLAN systems, and satellite communications. It is an N-channel Enhancement Mode, high-voltage, low power Field Effect Transistor (FET) that operates over the frequency range of 8GHz to 9000MHz. The device offers excellent linearity and power gains, as well as superior efficiency with low Input/Output (I/O) return loss.
The BLF10H6600PU is the ideal device for a wide range of applications including ISM band radio, WLAN, and satellite communications because of its superior linearity, gain and efficiency. It offers superior performance in a variety of wireless systems including 802.11 WLAN systems, ZigBee, Bluetooth, and GSM/GPRS systems. Additionally, the BLF10H6600PU is suitable for use in line of site and point to multipoint systems where high power gains and high linearity are essential for reliable operation.
The BLF10H6600PU is based on an enhancement-mode Metal Oxide Semiconductor (MOS) field-effect transistor (FET) structure. At the heart of this device is an N-type MOSFET with a source-drain breakdown voltage of 67V, a continuous Drain Current capability up to 25A, and an ON resistance of 0.9Ohms. The ON resistance of the device is kept low by utilizing a low frequency Gate Drive that is capable of switching speeds up to 25MHz. The device also offers high Input/Output (I/O) return loss and also offers excellent distortion performance.
The device offers high power gain and linearity for reliable and reliable operation even in harsh environments. The BLF10H6600PU is designed to operate from a wide range of input and output frequencies from 8GHz to 9000MHz. The device offers excellent PAE and distortion performance, allowing for better range, improved system sensitivity, and enhanced system performance.
The BLF10H6600PU is designed to operate over temperature from -40°C to +85°C without any de-rating. The device is capable of operating over a wide range of supply voltages from 3.0V to 16.0V and is RoHS compliant. The device is packaged in a hermetically sealed, low-thermal-impedance, and a low-cost 10-pin Dual-in-Line (DIL) package.
The BLF10H6600PU is an ideal device for a wide range of applications including ISM band radio, WLAN, and satellite communications. It provides excellent performance in a variety of wireless systems including 802.11 WLAN systems, ZigBee, Bluetooth, and GSM/GPRS systems.
The specific data is subject to PDF, and the above content is for reference
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