BLF189XRAU Allicdata Electronics
Allicdata Part #:

1603-1159-ND

Manufacturer Part#:

BLF189XRAU

Price: $ 156.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: BLF189XRA/SOT539/TRAY
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 150mA 50...
DataSheet: BLF189XRAU datasheetBLF189XRAU Datasheet/PDF
Quantity: 29
1 +: $ 141.83200
10 +: $ 135.83700
Stock 29Can Ship Immediately
$ 156.02
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 500MHz
Gain: 26.2dB
Voltage - Test: 50V
Current Rating: 2.8µA
Noise Figure: --
Current - Test: 150mA
Power - Output: 1700W
Voltage - Rated: 135V
Package / Case: SOT539A
Supplier Device Package: SOT539A
Description

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The BLF189XRAU Transistor is a high-performance device designed for use in radio frequency (RF) systems. It is a high power device capable of producing extraordinary gains and output power.

The BLF189XRAU Transistor has a wide range of applications in RF systems. It can be used as a switch in HF, VHF and UHF systems, as well as a power amplifier. It can also provide frequency conversion and frequency modulation.

The BLF189XRAU Transistor is a Field Effect Transistor (FET). As a FET, it consists of two types of carriers, electrons and holes. The carriers are separated by a thin layer of dielectric material that acts as a gate for the carriers. An applied voltage causes the channel to form between the source and the drain and thus allows the current to flow.

The BLF189XRAU Transistor has a wide frequency range and a high voltage gain, making it ideal for high power applications. It has a high current rating and low noise, making it ideal for low noise amplifiers. Due to its wide frequency range and high voltage rating, it is also well suited for microwave applications.

The BLF189XRAU Transistor uses a bipolar construction and has two gate terminals and two drain terminals. It is primarily used as a switch in RF systems. It is common to see it used as a switch in HF, VHF, and UHF radio transmitters, as well as for power amplifiers. It is also used in frequency conversion and frequency modulation.

The BLF189XRAU Transistor also offers a high level of reliability and is designed to withstand harsh environments. The gate oxide layer is designed to be highly reliable, providing improved device performance for long-term operation.

The BLF189XRAU Transistor has a wide variety of uses and is an excellent choice for a variety of RF applications. It is capable of producing great gains and has the power to handle high power applications. The low noise and reliability make it ideal for use in low-noise amplifiers, while the wide frequency range and high voltage rating make it well suited for microwave applications.

The specific data is subject to PDF, and the above content is for reference

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