Allicdata Part #: | 1603-1159-ND |
Manufacturer Part#: |
BLF189XRAU |
Price: | $ 156.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | BLF189XRA/SOT539/TRAY |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 150mA 50... |
DataSheet: | BLF189XRAU Datasheet/PDF |
Quantity: | 29 |
1 +: | $ 141.83200 |
10 +: | $ 135.83700 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 500MHz |
Gain: | 26.2dB |
Voltage - Test: | 50V |
Current Rating: | 2.8µA |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 1700W |
Voltage - Rated: | 135V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
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The BLF189XRAU Transistor is a high-performance device designed for use in radio frequency (RF) systems. It is a high power device capable of producing extraordinary gains and output power.
The BLF189XRAU Transistor has a wide range of applications in RF systems. It can be used as a switch in HF, VHF and UHF systems, as well as a power amplifier. It can also provide frequency conversion and frequency modulation.
The BLF189XRAU Transistor is a Field Effect Transistor (FET). As a FET, it consists of two types of carriers, electrons and holes. The carriers are separated by a thin layer of dielectric material that acts as a gate for the carriers. An applied voltage causes the channel to form between the source and the drain and thus allows the current to flow.
The BLF189XRAU Transistor has a wide frequency range and a high voltage gain, making it ideal for high power applications. It has a high current rating and low noise, making it ideal for low noise amplifiers. Due to its wide frequency range and high voltage rating, it is also well suited for microwave applications.
The BLF189XRAU Transistor uses a bipolar construction and has two gate terminals and two drain terminals. It is primarily used as a switch in RF systems. It is common to see it used as a switch in HF, VHF, and UHF radio transmitters, as well as for power amplifiers. It is also used in frequency conversion and frequency modulation.
The BLF189XRAU Transistor also offers a high level of reliability and is designed to withstand harsh environments. The gate oxide layer is designed to be highly reliable, providing improved device performance for long-term operation.
The BLF189XRAU Transistor has a wide variety of uses and is an excellent choice for a variety of RF applications. It is capable of producing great gains and has the power to handle high power applications. The low noise and reliability make it ideal for use in low-noise amplifiers, while the wide frequency range and high voltage rating make it well suited for microwave applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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BLF183XRU | Ampleon USA ... | 83.74 $ | 233 | RF FET LDMOS 135V 28DB SO... |
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BLF174XRS,112 | Ampleon USA ... | 86.16 $ | 60 | RF FET LDMOS 110V 28DB SO... |
BLF184XRGQ | Ampleon USA ... | 96.91 $ | 93 | RF FET LDMOS 135V 23DB SO... |
BLF188XRGJ | Ampleon USA ... | 117.33 $ | 100 | RF FET LDMOS 135V 24DB SO... |
BLF189XRASU | Ampleon USA ... | 156.02 $ | 57 | BLF189XRA/SOT539/TRAYRF M... |
BLF189XRAU | Ampleon USA ... | 156.02 $ | 29 | BLF189XRA/SOT539/TRAYRF M... |
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