Allicdata Part #: | 1603-1042-2-ND |
Manufacturer Part#: |
BLF188XRGJ |
Price: | $ 117.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 135V 24DB SOT1248C |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108... |
DataSheet: | BLF188XRGJ Datasheet/PDF |
Quantity: | 100 |
100 +: | $ 106.66700 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 108MHz |
Gain: | 24.4dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 40mA |
Power - Output: | 1400W |
Voltage - Rated: | 135V |
Package / Case: | SOT-1248C |
Supplier Device Package: | SOT1248C |
Description
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BLF188XRGJ Application Field and Working Principle
The BLF188XRGJ is a N-Channel Enhancement Mode Field-Effect Transistor, or FET, especially designed for radio-frequency (RF) applications. It is a high-power FET transistor, tailored for excellent linearity, offering superior performance and superior ruggedness than any other FETs available in the current market, with a maximum power dissipation of 240W and nominal output power up to 10KW (SSB) at Vdd=50V and Idd=35A. In addition, with a very low thermal resistance and high gain, the device can handle very high junction temperatures and is able to be used in high-power RF amplifiers.The BLF188XRGJ consists of an N-channel array, along with a control gate, which uses a three-dimensional network of metal-oxide-semiconductor field-effect transistors, or MOSFETs, to control the current flowing through the array. These MOSFETs act as a total of eight modulation elements, with two modulation elements in each of the N-channel array. This arrangement enables precise tuning of the device’s electrical characteristics for optimum performance.The BLF188XRGJ incorporates an integral internal gate short, which is essential to reduce gate noise and improve overall stability. As a whole, these features make the BLF188XRGJ more efficient and easier to control, making it ideally suited for a wide range of RF applications. The BLF188XRGJ has a wide range of uses due to its excellent linearity and performance in high power applications. It is suitable for use in radio and television broadcast, time division multiple access, land mobile radio, and satellite communications. It is also suitable for use in radar, high-gain HF amplifiers, high-efficiency power amplifiers, and pulse modulators.The working principle of the BLF188XRGJ is based on the principle of the field effect transistor (FET). FETs are voltage-controlled semiconductor devices that use a three-terminal gate. This gate controls the flow of electric current between the two external terminals, source and drain. In an FET, the gate is insulated from source and drain to reduce capacitive coupling and prevent leakage current. The BLF188XRGJ uses an N-channel array, which consists of multiple MOSFETs arranged in a three-dimensional matrix. The gate voltage controls the current through the MOSFETs and by varying the gate voltage, one can regulate the current flow between the source and drain. This FET device provides excellent linearity and outstanding performance and is suitable for a wide range of high power applications. It is capable of producing high power and handling high junction temperatures and is thus ideal for use in radio-frequency (RF) applications. The BLF188XRGJ is also robust and stable, and able to provide excellent linearity and signal fidelity.The specific data is subject to PDF, and the above content is for reference
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