BLF147,112

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The BLF147,112 is a high-power, highly linear, unilateral, N-channel enhancement mode depletion mode MOSFET developed for microwave applications. This device utilizes the latest advances in MOSFET technology, allowing for up to 4W of power output with excellent linearity and efficiency. The BLF147,112 exhibits excellent gain and input/output matching characteristics, making it an ideal choice for RF, microwave and power amplifier applications. In addition, the device features a wide range of operating frequency, low Quiescent Current, built-in temperature protection, and an enabling gate-shorting circuit.

The BLF147,112 has many applications and is ideal for use in RF, microwave and power amplifier circuits. Its excellent performance characteristics and high power output make it suitable for use in the VHF and UHF bands in particular. The gain, linearity and efficiency of the BLF147,112 make it an excellent choice for base stations, repeaters, and othser HF/VHF/UHF applications. In addition, the device is suitable for mobile, personal, and surveillance communication systems, as well as high-power audio and industrial applications.

The BLF147,112 is a depletion mode MOSFET, meaning that its impedance increases as the drain voltage increases. It is a N-channel device, which means that the carrier transport is primarily enabled when an N-type material is used in the external load. The threshold voltage of the MOSFET is approximately 18V, and it has a maximum drain-source voltage of 45V. The device operates over a wide range of frequecies, covering 3GHz to 6GHz, and has a maximum output power of 4W.

The BLF147,112 features a wide range of features which make it an excellent choice for high-power RF, microwave, and power amplifier applications. It has a built-in temperature protection circuit which keeps the device protected in high temperature environments, and its gate-shorting circuit enables easy connection to a control signal. In addition, the BLF147,112 has excellent gain and linearity characteristics, and its high power output allows it to be used in high-power applications with relative ease. Furthermore, the low Quiescent Current featured by the device makes it an ideal choice for applications with limited power supply.

Overall, the BLF147,112 is a highly capable MOSFET, designed for use in high-power RF, microwave, and power amplifier applications. Its wide range of features and excellent performance characteristics make it an ideal choice for base station and mobile communication systems, as well as surveillance systems, high-power audio, and other industrial applications. The device has a wide range of operating frequencies, low Quiescent Current, built-in temperature protection, and an enabling gate-shorting circuit, making it a valuable component for any engineer looking for a reliable, high-power solution.

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