BLF184XRGQ

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The BLF184XRGQ is a lateral N-channel field effect transistor capable of handling large power. It is a high gain, areally efficient and low noise amplifier in the frequency range of 15 - 4500Mhz. With suitable design, the efficiency of these transistors can reach values beyond 99%. The maximum output power of this device is 750W in the frequency range of 400Mhz-3Ghz with an input power of 1W and a drain voltage of 45V.

The BLF184XRGQ is well suited for many applications such as radio transmitters, local oscillators, RF/microwave amplifiers and cellular base stations. It has been designed to provide the maximum amount of power in the shortest amount of time.

The working principle of BLF184XRGQ is based on Schottky rectification, where the drain-to-source voltage is utilized for rectification of the audio signal. The two-terminal device acts as a voltage source, when operating in the linear region. As current flows from the source to the drain, an electric field is applied to a channel between the drain and source, creating a drain current modulation, which in turn modulates a voltage across the drain-to-source junction. The resulting audio signal is then detected by the working component.

The BLF184XRGQ can be used in a number of ways due to its versatile design. It can be used as a low-noise linear amplifier, in high power applications such as radio transmitters, in local oscillators, in RF/microwave amplifiers, and in cellular base stations. The wide operating frequency range, high power capability and high linearity make the BLF184XRGQ an ideal solution for many industrial and consumer applications.

The BLF184XRGQ is also capable of providing a high degree of circuit flexibility, allowing the user to customize the device for specific applications. By utilizing Schottky rectification, the device can be designed and scaled to meet the power requirements of various applications.

The BLF184XRGQ is capable of providing significant performance benefits in any application where power and noise are a concern. This transistor is an excellent choice for a variety of applications, including transmitters, local oscillators, and RF/microwave amplifiers, where low noise levels and high efficiency are critical.

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