Allicdata Part #: | 568-10993-ND |
Manufacturer Part#: |
BLF188XRU |
Price: | $ 129.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 135V 24.4DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108... |
DataSheet: | BLF188XRU Datasheet/PDF |
Quantity: | 578 |
1 +: | $ 117.41900 |
10 +: | $ 112.45500 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 108MHz |
Gain: | 24.4dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 40mA |
Power - Output: | 1400W |
Voltage - Rated: | 135V |
Package / Case: | SOT539A |
Supplier Device Package: | SOT539A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLF188XRU is a wideband, self-biased, common gate amplifier designed for use in amplifiers, oscillators, and switches for applications from 5 KHz to 3 GHz. Its flexible architecture enables the user to choose from a variety of different bias networks in order to optimize the performance of their circuits. The architecture also enables very wide bandwidth operation with both the gain and power characteristics remaining nearly constant over the entire frequency range.
The device is a voltage variable, self-biased, common gate amplifier with a gain of typical 8dB and a maximum output power of 40 dBm within the same frequency range. It consists of an internal MOSFET stage, which amplifies signals, and a bias network, which controls the bias and input drive level. The amplifier also includes a series of passive components, such as resistors and capacitors, which assist in controlling the frequency response of the device and help maintain a low-noise level. The device is internally protected with a reverse voltage protection circuit, which ensures optimum operation in the event of any accidental high voltage conditions.
The main application field for the BLF188XRU is high power amplifier and low noise amplifier, especially for wideband applications. These applications utilize the wide bandwidth offered by the device. The amplifier can also be used in oscillators and switches over a wide frequency range. As the device is self-biased, it eliminates the need for external bias circuits, thus simplifying designs. Due to its high input and output power levels, the BLF188XRU can be used in a variety of applications, such as industrial and medical equipments, where reliable operation is required.
The working principle of the device is based on a common-gate amplifier topology. The incoming signal is amplified by the MOSFET stage and then is voltage controlled by the bias network to adjust input drive level and output power. The bias network is made up of a ladder network of resistors and capacitors, which passively works with the internal MOSFET stage and adjusts the bias voltage and provides sufficient input drive. The device also has high linearity and low power consumption, which ensure good operation. Due to its working principle and design, the device has a wide bandwidth and can operate over a wide frequency range.
In conclusion, the BLF188XRU is a wideband, self-biased, common gate amplifier designed for high power amplifier and low noise amplifier. Its flexibility and high power levels make it ideal for use in many applications from 5 KHz to 3 GHz. The device operates on a common-gate amplifier topology, which is adjustable using a bias network. It is also internally protected for improved reliability and its low power consumption ensures good system performance.
The specific data is subject to PDF, and the above content is for reference
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