BLF189XRASU

Series:	--
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	500MHz
Gain:	26.2dB
Voltage - Test:	50V
Current Rating:	2.8µA
Noise Figure:	--
Current - Test:	150mA
Power - Output:	1700W
Voltage - Rated:	135V
Package / Case:	SOT539B
Supplier Device Package:	SOT539B

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BLF189XRASU Application Field and Working Principle

BLF189XRASU is a type of field-effect transistor (FET) mainly used in radio frequency (RF) applications. As a kind of variation of insulated-gate bipolar transistors (IGBT) or junction field-effect transistors (JFET), FETs are widely used in controlling current and voltage.BLF189XRASU is a high voltage lateral N-Channel FET, optimized for switching and amplifier applications in a variety of frequencies. It can be used in wireless communication, power supplies, and other high-frequency system designs. Unique features of BLF189XRASU also include its very low input capacitance, fast switching speed, and operation at very high temperatures up to 175°C. It has an awesome input impedance of 300mohm and has excellent power efficiency with a maximum power dissipation of 250 watts.The working principle of BLF189XRASU is quite simple. This field-effect transistor comprises of two inputs; one The gate, and the other the source of current. When the gate voltage is increased, a negative charge builds up in the gate region and this pushes the electrons away from the gate region. This depletes the electrons in the channel and the current passing through the FET is reduced or stopped completely. In the same way, when the gate voltage is reduced, the electrons in the channel will become attracted to the gate and current will be allowed to pass through again.The BLF189XRASU is an all-round versatile high voltage FET that is available in various power and size packages. The current rating is high and the maximum operating temperature is good. This makes it suitable for use in a variety of applications, including power supplies, switching regulative devices, power amplifiers, body-worn applications and more.Overall, the BLF189XRASU is an excellent type of FET suitable for RF applications with its superior features and functions. Its working principle is simple and straightforward and its input impedance and power efficiency is good. It can withstand high temperatures, as well as high currents, making it ideal for high-frequency purposes. As such, the BLF189XRASU is the ideal choice for a variety of RF applications.

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