| Allicdata Part #: | 568-12151-5-ND |
| Manufacturer Part#: |
BLF184XRU |
| Price: | $ 96.91 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 135V 23DB SOT1214A |
| More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 100mA 10... |
| DataSheet: |  BLF184XRU Datasheet/PDF |
| Quantity: | 145 |
| 1 +: | $ 88.09920 |
| 10 +: | $ 83.93490 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | LDMOS (Dual), Common Source |
| Frequency: | 108MHz |
| Gain: | 23.9dB |
| Voltage - Test: | 50V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 100mA |
| Power - Output: | 700W |
| Voltage - Rated: | 135V |
| Package / Case: | SOT-1214A |
| Supplier Device Package: | SOT1214A |
Description
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<html><body><h2>BLF184XRU Application Field and Working Principle</h2><p>With the development of modern industrial technology, there is a need for various commonly used transistors, especially FETs and MOSFETs used in Radio Frequency (RF) applications. At the same time, semiconductor manufacturers have begun to develop a wide variety of RF transistors with different specifications, suitable for a variety of fields. One such device is the BLF184XRU, which is particularly suitable for use in RF amplification and switching applications.</p><h3>Application Field</h3><p>The BLF184XRU transistor is mainly suitable for RF power amplification applications, and its excellent performance in a variety of key parameters makes it suitable for a wide range of RF power amplifier applications. For example, mobile phones and base stations.</p><p>The transistor is suitable for use in commercial radio communication systems, HDTV broadcasting, radio navigation, automotive audio systems, satellite earth stations, internet radio and other applications involving frequencies between 315MHz to 1000MHz. It is also suitable for various industrial applications such as medical equipment and consumer electronics.</p><p>The excellent linearity of the BLF184XRU transistor makes it suitable for beam transmission applications, such as the transmission of audio or video signals from one point to another with minimal signal distortion or interference. In addition, the transistor is capable of supporting data transfer rates of up to 6Gbps, making it suitable for Hyper WiderBand (HWB) and Multi-Gigabit applications.</p><h3>Working Principle</h3><p>The BLF184XRU is a high power, wide-banded NPN-MOSFET transistor. It is manufactured using a special N-type MOSFET process, with a series of thin film layers providing excellent conductivity and current carrying capacity. A specially designed gate oxide layer and gate electrodes provide extremely low leakage current, allowing the transistor to operate with more efficiency and reliability.</p><p>A unique characteristic of this transistor is its ability to operate at frequencies ranging from 315MHz to 1000MHz. This is possible due to the large conductive area of the mosfet and the low gate capacitance.</p><p>The BLF184XRU N-MOSFET has been designed to meet the requirements of a high power amplifier operating in the RF frequency range. It has a wide linear working region and is capable of operating at very high voltages, and is also capable of providing excellent phase noise performance, making it suitable for a wide variety of RF applications.</p></body></html>The specific data is subject to PDF, and the above content is for reference
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