BLF182XRSU Allicdata Electronics
Allicdata Part #:

1603-1063-ND

Manufacturer Part#:

BLF182XRSU

Price: $ 74.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 135V 28DB SOT1121B
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 100mA 10...
DataSheet: BLF182XRSU datasheetBLF182XRSU Datasheet/PDF
Quantity: 48
1 +: $ 67.32180
10 +: $ 63.84800
100 +: $ 57.76740
Stock 48Can Ship Immediately
$ 74.06
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 108MHz
Gain: 28dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 250W
Voltage - Rated: 135V
Package / Case: SOT-1121B
Supplier Device Package: --
Description

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BLF182XRSU is a N-channel high-frequency radio frequency field effect transistor. It is a special type of transistor that has been developed to work in high-frequency applications. It is most commonly used in high-frequency radio communication, television transmission and solid-state electronics. It is a highly reliable device, offering low resistance and high power handling capability.

The BLF182XRSU transistor is designed to have excellent high-frequency characteristics with a very low drain-source on-resistance of 0.018 Ohms. Its gate-source threshold voltage is just 2V and its maximum power dissipation is 1W. This makes it an ideal choice for applications where an extremely high output current is required and where very low power dissipation is also essential.

This type of transistor works on the principle of field effect transistor (FET). The FET is a three-terminal device in which a voltage applied to the gate controls the current passing between the source and drain electrodes. The FET is considered to be the most important type of transistor in high-frequency radio applications, because it offers low resistance and good flexibility to the designers.

The BLF182XRSU can be used in a variety of applications in the field of high-frequency electronics. These include radio frequency amplifiers, oscillators and power amplifiers. It is widely used in transmitter base-stations, military radios and high data rate communication networks. It is also used in RF scanned arrays and cellular radios.

In transmitters, the BLF182XRSU is used in the power amplifier stage to provide a high-performance output. It provides a linear output with minimal distortion and a good spurious response. It is also used in the oscillator stage to allow users to create stable oscillations with low noise and low distortion. This allows for high-performance frequency shifting and modulation.

The BLF182XRSU is also commonly used in receivers. It is commonly used in the front ends to amplify signals from low-power sources and it is also used in the mixer stage to improve immunity to interference. This ensures that radio signals can be accurately and reliably received over long-range distances.

The BLF182XRSU is an ideal choice of transistor for applications requiring high output current across a wide-range frequency range. Its low drain-source on-resistance and good power-handling capability make it very suitable for high frequency communication and radio frequency power amplifiers. It is highly reliable and widely used in radio frequency applications, allowing radios to operate with excellent precision and reliability.

The specific data is subject to PDF, and the above content is for reference

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