| Allicdata Part #: | 1603-1132-ND |
| Manufacturer Part#: |
BLF189XRBU |
| Price: | $ 178.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF MOSFET SOT539 TRAY |
| More Detail: | RF Mosfet LDMOS 50V 200mA 108MHz 26dB 1900W SOT539... |
| DataSheet: |  BLF189XRBU Datasheet/PDF |
| Quantity: | 49 |
| 1 +: | $ 162.51500 |
| 10 +: | $ 155.64600 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 108MHz |
| Gain: | 26dB |
| Voltage - Test: | 50V |
| Current Rating: | 2.8µA |
| Noise Figure: | -- |
| Current - Test: | 200mA |
| Power - Output: | 1900W |
| Voltage - Rated: | 135V |
| Package / Case: | SOT539A |
| Supplier Device Package: | SOT539A |
Description
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The BLF189XRBU is a transistor designed for radio frequency (RF) applications. It is part of a family of devices classified as Field-Effect Transistors (FETs), specifically Metal-Oxide-Semiconductor FETs (MOSFETs). This type of device is used in many types of circuit, as it is well suited for high frequency applications as they feature a low input capacitance, a low gate-source capacitance, and a high breakdown voltage. The device is best suited for use in power amplifiers and other circuits where the gate voltage must be varied in order to control current flow from the source to the drain.The BLF189XRBU is a N-Channel depletion type device. The N-Channel refers to the fact that the device is composed of two semiconductor layers with the two contacts at the bottom being of opposite type. This device features a low gate to source threshold voltage, a high dV/dt (rate of voltage change), and a low gate charge. The breakdown voltage of the device is also quite high, allowing for use in circuits that require a large amount of current flow.When using the BLF189XRBU, it is important to keep in mind that the device is a depletion type, meaning that the current flow between the source and the drain decreases as the gate voltage increases. This means that the desired current flow must be accurately calculated before powering the device. Additionally, since the device is a FET, the gate voltage must be properly controlled to prevent unwanted current flow.The BLF189XRBU is well suited for use in applications such as switching, modulation/demodulation, amplifier stages, and antenna tuning. It can also be used in applications where a high input impedance is desired, such as in communications systems. Additionally, the device\'s high maximum drain current rating makes it ideal for use in power amplipers, such as those used in radar and other systems.When assembling a circuit that makes use of the BLF189XRBU, proper care must be taken to ensure that the device is not in a position that would result in an overload. Additionally, it is important to properly support the device with its own heat sink, as it can generate a considerable amount of heat when used in power amplifying applications.In conclusion, the BLF189XRBU is an ideal device for use in radio frequency applications, as it is well suited for such applications due to its low input capacitance, high breakdown voltage, and high dV/dt. Additionally, the device is well suited for use in amplifier stages, communications systems, and other applications requiring a high input impedance. It is important to keep in mind, however, that the proper precautions must be taken when assembling the device into a circuit, in order to ensure that the correct current flows are achieved without overloading the device.
The specific data is subject to PDF, and the above content is for reference
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