BLF183XRSU

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BLF183XRSU is a high power RF MOSFET device from NXP which has been developed for use in broadband amplification applications from 20MHz to 500MHz. It is primarily used in PA applications within the transmitter stage for a range of radio applications including base stations, mobile/portable radio and cellular telecommunication systems. It is a single field effect transistor with a breakdown voltage of 400V and a continuous drain current of 200mA.

This RF MOSFET is typically used in high power amplifier designs, predriver stages and driver amplifier stages. Its main features are low gate charge, low gate-source charge injection, fast switching, low maximum RDS(on) and low thermal resistances which allow the device to be used in a wide range of applications. It provides superior performance to similar devices due to its low-loss characteristics and high-power efficiency.

The BLF183XRSU device is constructed using a planar epitaxial process which enables a symmetrical and balanced transistor construction for superior thermal and electro-dynamic performance. The device also integrates immunity to electrostatic discharges of up to 8kV. All these features combined give the device the ability to provide high power with high efficiency.

The external terminals utilize an internally isolated source and gate configuration. This gate-source isolation enables superior performance in high power applications, especially near the frequency extremes. This configuration also requires the use of separate bias supplies for each terminal to prevent cross-over current at high frequencies.

The working principle of the BLF183XRSU is based on “large signal” dynamic model, which is explained by a set of equations applicable to MOSFETs. When the gate voltage is increased, the number of conducting electron-hole pairs increases, which increases the drain current. This dynamic model explains the operation of the device as the drain current is proportional to the gate voltage, which ultimately results in amplified power.

The device also features a protection diode which prevents the reverse current flow, especially when the gate-source voltage becomes reversed. This protection diode ensures the safe operation of the device, even when the passive components or external circuit conditions are unfavorable.

All the features and characteristics of the BLF183XRSU make it an ideal solution for high power applications such as for RF power amplifiers, predrivers and drivers. It is also suitable for other high power applications such as test equipment, broadcast radio and television equipments, satellite communication systems, military/aerospace applications and high performance audio applications.

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