BLF175,112

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BLF175,112 is a high performance N-channel RF field effect transistor (FET) optimized for RF broadcast and cellular application. It is suitable for use in many RF applications such as amplifier, oscillator, and frequency multipliers due to its lower noise figure and high gain. It can be used in a wide range of temperatures, from -55°C to 135°C.

The BLF175,112 is a type of FET with an N-type junction. This type of FET uses a voltage applied to the gate to control the flow of current through the channel (source to drain) and is commonly used in radio frequency (RF) applications. FETs are the building blocks of many electronic circuits and are widely used in amplifiers, oscillators, receivers, and other types of digital and analog circuits.

The BLF175, 112 is a highly reliable device with a low source-to-drain leakage current (IDSS) and an optimized gate-to-source capacitance (Ciss). The device can handle high power levels and is designed to withstand extreme temperature ranges (from -55°C to 135°C). Additionally, the device has a low gate-to-source capacitance, which allows it to operate at a lower voltage and dissipate less power.

The device has an excellent thermal resistance (of 26°C/W), allowing it to maintain peak performance even when operating at high temperature ranges. The BLF175,112 can also be used in both Class A and Class B amplifier configurations. The device is also well-suited for low noise amplifier designs, such as low power transmitter stages.

In addition to its excellent performance at high temperatures, the BLF175,112 also has an improved power gain over other similar FETs. This makes it ideal for use in high power and high frequency applications. The device has an excellent input and output impedance matching, which ensures that the signals are transmitted with minimal distortion and better signal integrity.

Overall, the BLF175,112 is an ideal FET for RF broadcast and cellular applications due to its high reliability, low noise figure, high gain, and improved power gain. The device is well-suited for both Class A and Class B amplifier configurations and is ideal for low noise amplifier designs. Additionally, the device has an excellent thermal resistance and input and output impedance matching.

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