BLF174XR,112

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The BLF174XR,112 is a silicon N-channel Field Effect Transistor (FET) designed for use in RF applications. This device is a high-frequency, low-noise transistor optimized for use in broadcast systems and an excellent choice for applications like RF amplifiers, mixers, and switches.

The device has an electronically variable, source-gate voltage, in both positive and negative gate-emitter bias directions. This allows the device to be fully matched and operated with a wide range of supply voltages. The device is extremely stable and requires no adjustment for temperature.

The performance characteristics of the device make this FET ideal for radio applications. Its high breakdown voltage and fast switching speed make it an ideal choice for high-frequency, low-noise applications. To further increase its performance, the BLF174XR,112 also features a low-frequency output stage that is optimized for maximum gain and linearity.

The working principle of the BLF174XR,112 is based on the field effect transistor (FET) technology and is an extension of the regular MOSFET. A FET is a four-terminal device which uses a voltage applied between the source and gate terminals to control the current between the source and drain terminals.

When the gate terminal is at a higher potential than the source, a depletion layer forms at the junction between the gate and the source and the current between the source and drain terminals stops. The amount of current between the source and drain can be controlled by adjusting the voltage between the gate and source terminals. This is the working principle of the BLF174XR,112.

The device is designed with a high input power capability and low junction capacitance. This makes it an ideal choice for high-frequency applications as it can provide stable, low-power RF operation. Furthermore, it is designed with a low thermal resistance and a low gate-source capacitance. This allows it to operate at a higher frequency and with less noise than traditional FETs.

The BLF174XR,112 is a high performance, low-misoperation, RF FET designed for broadcast applications. It is designed with highly stable, high-frequency characteristics that are ideal for low-noise applications. Its low junction capacitance and high input power capability also make it an ideal choice for high frequency applications. Its low thermal resistance and low gate-source capacitance provide excellent performance and reliability in a variety of RF applications.

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