BLF178XRS,112 Allicdata Electronics
Allicdata Part #:

BLF178XRS,112-ND

Manufacturer Part#:

BLF178XRS,112

Price: $ 139.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 110V 28DB SOT539B
More Detail: RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108...
DataSheet: BLF178XRS,112 datasheetBLF178XRS,112 Datasheet/PDF
Quantity: 1000
60 +: $ 126.68200
Stock 1000Can Ship Immediately
$ 139.35
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 108MHz
Gain: 28dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 40mA
Power - Output: 1400W
Voltage - Rated: 110V
Package / Case: SOT539B
Supplier Device Package: SOT539B
Description

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BLF178XRS,112 Application Field and Working PrincipleThe BLF178XRS,112 is a voltage-controlled field-effect transistor (VFET) specifically designed for RF (radio frequency) applications. As a type of FET (Field Effect Transistor), it is a semiconductor device commonly used in high-frequency applications such as radio transmitters and receivers. The BLF178XRS,112 uses the VFET topology to combine the performance of FETs with the flexibility of a voltage-controlled amplifier. The main features of the BLF178XRS,112 include wide bandwidth, low noise, low distortion, and high input/output impedance.The main application of the BLF178XRS,112 is in radio frequency applications such as broadband amplifiers, low-noise amplifiers, and oscillators. Its design makes it ideal for use in radio transmitters and receivers, as well as for medical imaging and radar systems. The device is also used for power amplifiers for wireless networks, and for amplifiers that require high dynamic range.The BLF178XRS,112 utilizes the VFET topology to power circuits from a low-voltage power supply. This topology combines the high-frequency characteristics of a field-effect transistor with the versatility of a voltage-controlled amplifier. It comprises an insulated gate field-effect transistor (IGFET) and two separate variable capacitors to control the current flow. The variable capacitors enable the BLF178XRS,112 to be used in a wide range of RF (radio frequency) applications. For example, the device can be used for tunable oscillators, amplifiers, and low-noise amplifiers. The variable capacitors help to increase the frequency range and reduce distortion levels, as well as to provide a better quality signal than a conventional FET.The BLF178XRS,112 also has a wide dynamic range. This allows the device to operate at high frequencies and still maintain good linearity and gain. It also helps to reduce distortion, making it ideal for applications that require high dynamic range.The BLF178XRS,112 is an efficient device, as it uses only a small amount of power to operate. This makes it suitable for a wide range of wireless applications, such as cellular communications, wireless LANs, and other wireless networks.In conclusion, the BLF178XRS,112 is an efficient and versatile device, ideal for use in radio frequency applications such as amplifiers, low-noise amplifiers, and oscillators. Its wide dynamic range and wide frequency range make it suitable for use in a variety of wireless and medical imaging applications.

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