Allicdata Part #: | 1603-1064-ND |
Manufacturer Part#: |
BLF182XRU |
Price: | $ 74.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 135V 28DB SOT1121B |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 100mA 10... |
DataSheet: | BLF182XRU Datasheet/PDF |
Quantity: | 169 |
1 +: | $ 67.32180 |
10 +: | $ 63.84800 |
100 +: | $ 57.76740 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 108MHz |
Gain: | 28dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 250W |
Voltage - Rated: | 135V |
Package / Case: | SOT-1121B |
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BLF182XRU is a wideband high power RF transistors from NXP. It features an SOT363 small surface-mount package, which makes it available for a variety of applications, including transmission line and RF power amplifier applications. It also enables a wide range of potential applications, such as Wi-Fi, ZigBee, 3G, 4G, and LTE.
The BLF182XRU is a N-channel enhancement mode power MOSFET designed for RF power amplification. It is specifically designed for high frequency transistor applications which require maximum power efficiency and switching speeds. The device is built using third generation processing techniques and provides excellent gain performance. Furthermore, it offers a low static drain-source resistance (R DS(ON)) alongside fast switching capabilities.
The BLF182XRU features an advanced epitaxial drain structure that provides very low gate threshold voltage for fast switching and has an optimized gate oxide for RF applications. It is constructed with high efficiency vertical N-channel MOSFET technology, which ensures that all circuit elements operate within the parameters specified by NXP as ideal for RF applications. Additionally, the device is built to operate in a wide range of temperatures, from -55C to +175C.
In operation, the BLF182XRU acts as a voltage-controlled switch. It modulates the voltage, current, and power that is passed between its drain and source, depending on the signal applied to the gate. As the control voltage is increased, the current is increased, and conversely, as the voltage is lowered, the current is reduced. This switching action allows the device to be used in a variety of RF applications, ranging from wireless communications to high power amplifiers.
The BLF182XRU is designed to be used in a variety of RF applications, including RF transmitters, high power amplifiers, and antennas and transceivers. It is ideal for applications that require a stable and reliable RF signal, such as RF transmitters, high power amplifiers, and antennas. Additionally, the device can be used in power supplies, high power switchers, and linear amplifiers due to its low switching resistance and fast switching rates. Overall, the BLF182XRU is an excellent choice for the development of a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF178XR,112 | Ampleon USA ... | 148.78 $ | 66 | RF FET LDMOS 110V 28DB SO... |
BLF182XRU | Ampleon USA ... | 74.06 $ | 169 | RF FET LDMOS 135V 28DB SO... |
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