Allicdata Part #: | 1603-1131-ND |
Manufacturer Part#: |
BLF189XRBSU |
Price: | $ 178.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET SOT539 TRAY |
More Detail: | RF Mosfet LDMOS 50V 200mA 108MHz 26dB 1900W SOT539... |
DataSheet: | BLF189XRBSU Datasheet/PDF |
Quantity: | 50 |
1 +: | $ 162.51500 |
10 +: | $ 155.64600 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 108MHz |
Gain: | 26dB |
Voltage - Test: | 50V |
Current Rating: | 2.8µA |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 1900W |
Voltage - Rated: | 135V |
Package / Case: | SOT539B |
Supplier Device Package: | SOT539B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF189XRBSU is a complex transistor that falls within the radio frequency (RF) technology category. It is a field effect transistor (FET) which stands for field-effect type or gate-type transistor. FETs represent one of the main classes of electronic components used in modern electronic systems. The BLF189XRBSU is a special class of FET that is designed for use in high frequency applications such as radio signals, cellular communications and satellite transmissions.
The name "BLF189XRBSU" refers to the model of a transistor made by the company NXP Semiconductors. The first three letters "BLF" may stand for "bipolar, low gain, frequency". This gives an indication of the characteristics of this transistor device. The "189X" signifies the type of FET, and the last three letters "RBSU" represent the lot number.
The BLF189XRBSU is a three terminal device composed of a channel, a source and a drain. It is a FET that is capable of operating in high-frequency environments. The device is used in a variety of applications such as radio circuits, amplifiers, mixers, IF and RF stages, as well as microwave systems. The BLF189XRBSU also has applications in industrial automation, automotive electronics and instrumentation systems.
The working principle of the BLF189XRBSU is based on the concept of an electric field (a potential difference generated by an electric charge). The BLF189XRBSU works by having a voltage applied across its gate-source terminal which creates an electric field in the semiconductor material. This electric field causes an accumulation or depletion of electrons that modulates the current flow in the channel. By varying the voltage applied to the gate, the transistor can be operated as an amplifier, a mixer, an IF or RF stage.
The BLF189XRBSU features a low gate capacitance, which enables it to operate up to 8GHz, making it suitable for high-frequency applications. It also offers low noise performance and excellent tolerance to thermal cycling, making it a suitable choice for applications such as RF amplification, switching and linear circuit applications. In addition, the device offers an easy to use pin-out which simplifies the process of wiring up the device. This increases the ease of use and allows engineers to quickly and easily integrate the BLF189XRBSU into their circuit designs.
In conclusion, the BLF189XRBSU is a high-performance transistor designed for use in high frequency applications. It is a three terminal device composed of a channel, a source and a drain and features a working principle based on the concept of an electric field. It can operate up to 8GHz and offers excellent tolerance to thermal cycling, making it suitable for RF amplification, switching and linear circuit applications. Overall, the BLF189XRBSU is an ideal choice for high frequency application designers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF178XR,112 | Ampleon USA ... | 148.78 $ | 66 | RF FET LDMOS 110V 28DB SO... |
BLF182XRU | Ampleon USA ... | 74.06 $ | 169 | RF FET LDMOS 135V 28DB SO... |
BLF174XR,112 | Ampleon USA ... | 86.16 $ | 54 | RF FET LDMOS 110V 28DB SO... |
BLF183XRU | Ampleon USA ... | 83.74 $ | 233 | RF FET LDMOS 135V 28DB SO... |
BLF184XRU | Ampleon USA ... | 96.91 $ | 145 | RF FET LDMOS 135V 23DB SO... |
BLF188XRU | Ampleon USA ... | 129.16 $ | 578 | RF FET LDMOS 135V 24.4DB ... |
BLF188XRSU | Ampleon USA ... | 129.16 $ | 116 | RF FET LDMOS 135V 24.4DB ... |
BLF183XRSU | Ampleon USA ... | 83.74 $ | 81 | RF FET LDMOS 135V 28DB SO... |
BLF184XRSU | Ampleon USA ... | 96.91 $ | 44 | RF FET LDMOS 135V 23DB SO... |
BLF1721M8LS200U | Ampleon USA ... | 188.48 $ | 50 | RF FET LDMOS 65V 19DB SOT... |
BLF182XRSU | Ampleon USA ... | 74.06 $ | 48 | RF FET LDMOS 135V 28DB SO... |
BLF174XRS,112 | Ampleon USA ... | 86.16 $ | 60 | RF FET LDMOS 110V 28DB SO... |
BLF184XRGQ | Ampleon USA ... | 96.91 $ | 93 | RF FET LDMOS 135V 23DB SO... |
BLF188XRGJ | Ampleon USA ... | 117.33 $ | 100 | RF FET LDMOS 135V 24DB SO... |
BLF189XRASU | Ampleon USA ... | 156.02 $ | 57 | BLF189XRA/SOT539/TRAYRF M... |
BLF189XRAU | Ampleon USA ... | 156.02 $ | 29 | BLF189XRA/SOT539/TRAYRF M... |
BLF189XRBSU | Ampleon USA ... | 178.77 $ | 50 | RF MOSFET SOT539 TRAYRF M... |
BLF189XRBU | Ampleon USA ... | 178.77 $ | 49 | RF MOSFET SOT539 TRAYRF M... |
BLF184XRGJ | Ampleon USA ... | 85.78 $ | 1000 | RF FET LDMOS 135V 23DB SO... |
BLF178P,112 | Ampleon USA ... | 148.78 $ | 12 | RF FET LDMOS 110V 28.5DB ... |
BLF10M6135U | Ampleon USA ... | 48.73 $ | 1000 | RF FET LDMOS 65V 21DB SOT... |
BLF10M6LS135U | Ampleon USA ... | 48.73 $ | 1000 | RF FET LDMOS 65V 21DB SOT... |
BLF10M6160U | Ampleon USA ... | 53.15 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
BLF10M6LS160U | Ampleon USA ... | 53.15 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
BLF10M6200U | Ampleon USA ... | 63.26 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF10M6LS200U | Ampleon USA ... | 63.26 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF178XRS,112 | Ampleon USA ... | 139.35 $ | 1000 | RF FET LDMOS 110V 28DB SO... |
BLF10H6600PSU | Ampleon USA ... | 147.09 $ | 1000 | RF FET LDMOS 110V 20.8DB ... |
BLF10H6600PU | Ampleon USA ... | 147.09 $ | 1000 | RF FET LDMOS 110V 20.8DB ... |
BLF177CR,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 125V SOT121BR... |
BLF1822-10,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 13.5DB S... |
BLF1046,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF1046,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF177,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 125V 19DB SOT... |
BLF175,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 125V 20DB SOT... |
BLF145,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 27DB SOT1... |
BLF147,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 14DB SOT1... |
BLF1043,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF1043,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF1820-90,112 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF LDMOS SOT50... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...