BLF1721M8LS200U Allicdata Electronics
Allicdata Part #:

1603-1028-ND

Manufacturer Part#:

BLF1721M8LS200U

Price: $ 188.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 19DB SOT502B
More Detail: RF Mosfet LDMOS 28V 2A 2.11GHz ~ 2.17GHz 19dB 55W ...
DataSheet: BLF1721M8LS200U datasheetBLF1721M8LS200U Datasheet/PDF
Quantity: 50
1 +: $ 171.34100
10 +: $ 164.10300
Stock 50Can Ship Immediately
$ 188.48
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.11GHz ~ 2.17GHz
Gain: 19dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 2A
Power - Output: 55W
Voltage - Rated: 65V
Package / Case: SOT-502B
Supplier Device Package: SOT502B
Description

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BLF1721M8LS200U is a low power, dual N-channel Lateral MOSFET generally used in wireless applications. It is a depletion-type, insulated gate field-effect transistor, commonly called an MOSFET. It works as a switch by controlling the voltage on the gate. It has fairly low input capacitance and drain-source capacitance which make it very adept for use in low-band high frequency applications.

This particular MOSFET is used primarily in HF and UHF applications, including amplifiers, oscillators, up-conversion, down-conversion, modulation, and power management. Its special properties make it ideal for these applications. It has a very low gate-source capacitance, along with low on-resistance with an operating temperature of -40 to +85°C. The on-resistance is just 0.18 ohms at VGS = 4.5V, making it an exceptionally efficient power switch, ideal for low-band UHF systems.

The working principle of this particular MOSFET is fairly straightforward. The voltage that is applied to the gate causes a field to be created that causes electrons to flow from the source to the drain, allowing a current to flow. This same field can be used to prevent a current from flowing if the voltage is low enough. This makes it act as a switch, controlling the current flow with the voltage on the gate.

The main application of the BLF1721M8LS200U is in high frequency and UHF systems. Its low capacitance gate makes it an exceptional choice for high frequency devices that require a low-power switch. It is also used in modulation devices and power management applications. It is very beneficial in these applications because it can operate with highly efficient current usage while still providing reliable switching action.

In conclusion, the BLF1721M8LS200U is an excellent choice for a low-power switch for HF and UHF applications. It has a very low gate-source capacitance, making it very efficient in these applications. Its low on-resistance and operating temperature makes it ideal for modulation and power management devices. The working principle is straightforward, with the voltage on the gate controlling the current flow.

The specific data is subject to PDF, and the above content is for reference

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