BLF10M6135U

Series:	--
Packaging:	Bulk
Part Status:	Last Time Buy
Transistor Type:	LDMOS
Frequency:	871.5MHz ~ 891.5MHz
Gain:	21dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	950mA
Power - Output:	26.5W
Voltage - Rated:	65V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST

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BLF10M6135U Application Field and Working Principle

The BLF10M6135U is a high power transistor designed for use in radio frequency (RF) applications. It is a field effect transistor (FET) and is the most powerful device in Mitsubishi’s Ultra Low Noise FET line. It has been designed for use in RF amplification up to 1.1 GHz and offers excellent performance in terms of noise, gain and output power.

Application Field

The BLF10M6135U is suitable for use in a variety of RF applications. It can be used for high power RF amplifiers, RF receivers, and other high power, low noise RF applications. It is ideal for use in mobile, communications equipment, GPS receivers, wire line, satellite and RFID applications.

Working Principle

A field-effect transistor (FET) is a transistor that uses an electric field to control the flow of current. The BLF10M6135U is an n-channel FET. The device consists of three terminals: gate, source, and drain. The gate terminal is used to control the electric field within the device. By applying a voltage to the gate terminal, an electric field is created that either allows or blocks current flow through the device. This allows the device to be used in a variety of switching and amplifier applications. The source terminal is connected to the source of current (ground for most applications) and the drain terminal is used to connect the device to the load. When a voltage is applied to the gate terminal, the gate-to-source capacitance creates a charge and the channel between the source and drain is raised to conduct a current. This is known as the essential operation of the device. The BLF10M6135U is characterized by its extremely low noise coefficient, its high gain, and its high output power. These features make it an ideal device for use in high power RF applications.

Conclusion

The BLF10M6135U is a high power transistor designed for radio frequency (RF) applications. It is an n-channel FET and is characterized by its extremely low noise coefficient, its high gain, and its high output power. It is suitable for use in a variety of RF applications including high power RF amplifiers, RF receivers, and other high power, low noise RF applications.

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