Allicdata Part #: | BLF1822-10,112-ND |
Manufacturer Part#: |
BLF1822-10,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 13.5DB SOT467C |
More Detail: | RF Mosfet LDMOS 26V 85mA 2.2GHz 13.5dB 10W SOT467C |
DataSheet: | BLF1822-10,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.2GHz |
Gain: | 13.5dB |
Voltage - Test: | 26V |
Current Rating: | 2.2A |
Noise Figure: | -- |
Current - Test: | 85mA |
Power - Output: | 10W |
Voltage - Rated: | 65V |
Package / Case: | SOT467C |
Supplier Device Package: | SOT467C |
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BLF1822-10,112 is part of a family of field-effect transistors (FETs) designed specifically for use in radio-frequency (RF) applications, such as operating transmitters, amplifiers and radio receivers. The BLF1822-10,112 FET offers high performance, with an input capacitance of 2.6pF, noise figure of 0.85dB and an operating frequency range of 800MHz to 2800MHz.
FETs are three-terminal active devices that are widely used in many different types of electronic circuits. They are similar to the more familiar electric control elements, such as vacuum tubes, triodes, and junction transistors. The device is composed of a central channel of semiconductor material, surrounded by two regions of an opposite type to form a p–n junction. Input signals are applied to one pair of terminal electrodes, while the other pair of electrodes is connected to the collector.
The BLF1822-10,112 FET has a breakdown voltage of 36V, and a pulse power rating of 0.3 Watts. The device features a low input capacitance of 2.6pF, which helps to reduce power consumption and improve the signal-to-noise ratio of the circuit. It also features a very low-noise figure of 0.85dB. One advantage of using FETs in RF applications is that they can produce a high impedance load on which the signal is modulated. This helps to reduce power consumption and improve the signal quality.
FETs are preferred for use in RF circuits because of their ability to operate at frequencies between 800MHz and 2800MHz. This allows the device to be used in a wide range of applications, including wireless communication and communication systems. Additionally, FETs are resistant to radiation and are capable of operating in extreme temperatures.
The working principle of the BLF1822-10,112 FET is based on the principle of “gate depletion”. When a voltage is applied across the gate-source junction, the depletion layer forms and causes the electrons to move to the gate. This, in turn, causes the entire channel to become reverse-biased, which causes the current flow between the drain and the source to be blocked. When no voltage is applied to the gate, the depletion layer vanishes, allowing the current to flow freely between the drain and the source.
FETs are used in a wide array of applications, ranging from consumer electronics and telecommunications to automotive systems, industrial equipment, and scientific instruments. They are widely used in radio-frequency applications, such as operating transmitters, amplifiers, and radio receivers. The BLF1822-10,112 is an excellent choice for such applications, thanks to its low capacitance and noise figure, as well as its wide operating frequency range.
The specific data is subject to PDF, and the above content is for reference
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