![BSC011N03LSATMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BSC011N03LSATMA1TR-ND |
Manufacturer Part#: |
BSC011N03LSATMA1 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 100A 8TDSON |
More Detail: | N-Channel 30V 37A (Ta), 100A (Tc) 2.5W (Ta), 96W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.45770 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSC011N03LSATMA1 is a common type of transistor used for many applications. It is classified as a single-gate, FET (Field-effect Transistor). It is a type of MOSFET (metal-oxide semiconductor FET) that uses an insulated gate to control the current flowing through it. In this article, we will look at the application field and working principle of the BSC011N03LSATMA1.
Application Field
The BSC011N03LSATMA1 is a widely used transistor for many applications. The main applications include switching and amplifying signals, controlling relays, and other low-voltage, high-current applications. It is specifically designed for use in digital and analog electronics and can handle both digital and analog signals. It can be used as an input/output (I/O) transistor in a digital circuit, or as an amplifier in an analog circuit. It can also be used as a voltage regulator in power supplies. Due to its low power consumption and compact size, the BSC011N03LSATMA1 is widely used in consumer electronics such as smart phones, tablets, and even portable videogame systems.
Working Principle
The BSC011N03LSATMA1 is a field-effect transistor that works through the modulation of the electric field of its gate. This gate is insulated from the other two terminals, the drain and the source. When voltage is applied to the gate, a polarized electric field is created that attracts electrons from the source. This creates an electric current between the source and the drain. Since this electric field can be regulated, the amount of current can be regulated as well. By varying the voltage on the gate, the transistor can be used to control the current and amplify signals.
In addition to amplifying and controlling signals, the BSC011N03LSATMA1 can also be used in more complex digital applications. This is because it is capable of operating in both depletion and enhancement modes. In depletion mode, the current remains on between the drain and the source unless the voltage on the gate is decreased below a certain threshold. In enhancement mode, the current remains off unless the voltage on the gate is increased above a certain threshold. This makes the BSC011N03LSATMA1 ideal for use in digital logic circuits.
Conclusion
The BSC011N03LSATMA1 is a widely used single-gate FET (Field-Effect Transistor). It is a type of MOSFET that uses the electric field of an insulated gate to control the current flowing through it. The main applications of BSC011N03LSATMA1 include switching and amplifying signals, controlling relays, and other low-voltage, high-current applications. It is also capable of operating in both depletion and enhancement modes, making it ideal for use in digital logic circuits. With its low power consumption and compact size, the BSC011N03LSATMA1 is an ideal choice for consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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