BSC050N03LSGATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSC050N03LSGATMA1TR-ND |
Manufacturer Part#: |
BSC050N03LSGATMA1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 80A TDSON-8 |
More Detail: | N-Channel 30V 18A (Ta), 80A (Tc) 2.5W (Ta), 50W (T... |
DataSheet: | BSC050N03LSGATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.20784 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSC050N03LSGATMA1 is a MesFET Technology, which is a single N-Channel MOSFET transistor. In the field of power supply, this type of MOSFET can be used in different applications such as DC/DC converters, bridge rectifiers, over-voltage protection circuits, and other applications.
BSC050N03LSGATMA1 MOSFET has a low on-resistance of 5 mΩ and a total gate charge of 9.75 nC. This provides for a high efficiency performance, high power density, and low RDSON values. It also has an ASO (Active Source Output) configuration, which allows for low gate resonance. The ASO pin allows for a greater control over the voltage driving the MOSFET, which makes it more efficient and lowers the chances of audio feedback when it is used in audio applications.
In terms of operating temperature, this MOSFET can operate reliably between -55〹C to +150〹C. It has a low gate capacitance of 6.75 pF, providing for low losses and high band-width. It also has a high breakdown voltage of 50 V. All these features and characteristics make the BSC050N03LSGATMA1 one of the best devices available in the market for electronic circuits with power requirements up to 50 W.
The working principle of BSC050N03LSGATMA1 is quite simple. When a voltage is applied to the gate, it attracts a channel of electrons from the source, leaving an area of positive charges. This is known as forming a channel and it increases the conductivity between source and drain. The greater the voltage, the greater the conductivity and the higher the drain current that can be passed through the MOSFET.
When the voltage is removed from the gate, the channel disappears and the MOSFET reverts to its non-conducting state. This allows for a precise and quick switching of current. This type of MOSFET also has low switching losses, which makes it ideal for use in high frequency, high power, and high temperature applications.
The BSC050N03LSGATMA1 is a powerful and reliable transistor. Its low gate capacitance and high breakdown voltage make it perfect for use in switch mode power supplies, DC/DC converters, bridge rectifiers and a variety of other applications. At the same time, its ASO configuration allows for low gate resonance, contributing to better audio performance. All these benefits make the BSC050N03LSGATMA1 one of the best transistors available in the market for electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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