Allicdata Part #: | BSC026NE2LS5ATMA1TR-ND |
Manufacturer Part#: |
BSC026NE2LS5ATMA1 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 24A 8TDSON |
More Detail: | N-Channel 25V 24A (Ta), 82A (Tc) 2.5W (Ta), 29W (T... |
DataSheet: | BSC026NE2LS5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.34014 |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 29W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
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The BSC026NE2LS5ATMA1 is a specialized type of transistor - namely, a MOSFET (metal Oxide Semiconductor Field Effect Transistor) - that is used in many applications. As one of the most common types of transistor, a MOSFET is used as a switch or amplifier, and offer advantages such as fast switching and low power consumption. The BSC026NE2LS5ATMA1 is a single MOSFET, which means that it uses a single power source to switch between two or more states.
A MOSFET is made up of three parts: gate, source, and drain. The gate is where an electrical signal is applied to control the flow of charge carriers, while the source and drain provide the pathways between which the charge carriers can travel. The BSC026NE2LS5ATMA1 has a maximum drain current of 20A, a peak drain current of 25A, and a drain to source voltage of 55V.
The BSC026NE2LS5ATMA1 is typically used as a switch and is known for its high input impedance and low power consumption. This makes it ideal for applications where power efficiency and speed are important. It can be used to operate a variety of equipment, from actuators and motors to light fixtures and solenoids.
The working principle behind the BSC026NE2LS5ATMA1 is based on the fact that when an electrical charge is applied to the gate region, it creates an electric field that allows for electrons and holes to be moved between the source and drain regions. This field can be used to control the flow of charge carriers between the source and drain in order to switch the current on or off.
Due to its high input impedance, low on-state resistance, and low power consumption, the BSC026NE2LS5ATMA1 is widely used in various applications such as motor control, actuators, solenoids, and any application that requires fast switching and efficient use of power. Additionally, the BSC026NE2LS5ATMA1 is used in automotive and aviation applications due to its ability to handle high voltages and currents.
In summary, the BSC026NE2LS5ATMA1 is a single MOSFET transistor that is used in many applications. It is known for its high input impedance and low power consumption, which makes it ideal for applications that require fast switching and power efficiency. The working principle behind the BSC026NE2LS5ATMA1 is based on the field effect transistor (FET) technology, whereby an electrical charge is applied to the gate region to control the flow of charge carriers between the source and drain. The BSC026NE2LS5ATMA1 is widely used in various applications such as motor control, actuation, and solenoids.
The specific data is subject to PDF, and the above content is for reference
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