Allicdata Part #: | BSC094N03SG-ND |
Manufacturer Part#: |
BSC094N03S G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 35A TDSON-8 |
More Detail: | N-Channel 30V 14.6A (Ta), 35A (Tc) 2.8W (Ta), 52W ... |
DataSheet: | BSC094N03S G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Continuous Drain (Id) @ 25°C: | 14.6A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 52W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
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The BSC094N03S G is a N-channel MOSFET (Metal-oxide semiconductor field-effect transistor) designed for a broad range of low-power switching applications. It is a particularly popular choice amongst many hobbyists and developers due to its very low on-state resistance, low gate charge and fast switching features.
Application field
The BSC094N03S G is well-suited for DC-AC power conversion in a wide variety of applications including low voltage switch-mode power supplies, variable speed motor control, logic level conversion and H-bridge motor control. It can also be used for other designs such as relay replacement, power distribution, solenoid control and home automated appliance control.
Working Principle
The BSC094N03S G is a depletion-mode MOSFET. In other words, it is normally “on” and does not need to be driven to turn it on. It operates by controlling the drain-source voltage with the gate-source voltage. When the gate voltage is zero, the channel is open and the flow of current between the source and the drain is unrestricted. When a positive voltage is applied to the gate, electrons are attracted and pass through the gate, thus reducing the current between the source and the drain. The larger the gate voltage, the more electrons are attracted, and the less current flows between the source and the drain. The internal capacitance between the gate and the drain determines the switching speed of this MOSFET.
Conclusion
The BSC094N03S G is an excellent N-channel MOSFET widely used in many low-power switching applications. Its extremely low on-state resistance and low gate charge combined with its fast switching properties make it a popular choice for many DC-AC power conversion designs such as low voltage switch-mode power supplies, variable speed motor control, logic level conversion and H-bridge motor control. Thanks to its versatility and versatility, the BSC094N03S G is a great option for many designers and engineers looking for an efficient, reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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