BSS138K-13

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BSS138K-13 is a single N-channel enhancement-mode field-effect transistor (FET) which utilizes a vertical structure. This feature provides superior current flow and conduction. The features and applications of this device make it a valuable resource used in a wide range of consumer, industrial and automotive electronics.

BSS138K-13 is an enhancement-mode FET, which operates as an open-drain device. This device requires an additional external pull-up resistor for proper operation. Device provides a low capacitance input, gate-source and gate-drain junctions.

As an enhancement-mode FET, BSS138K-13 has an ESD protection with an ESD rating of 5kV to ground. It also has a powered substrate (VGs) signal level control and a low on-state resistance (Ron) rating. The product has its current handling capabilities expanded with a breakdown voltage (BVdss) rating of 50V. This device also has a low on-state resistance (Ron) rating, providing superior current conduction.

BSS138K-13 can be used in many applications such as level shifting, load switching, voltage regulation, current limiting and signal filtering. Additionally, this device can be used in Robotic and Automotive applications such as E-brake sensing and Load Switching. Furthermore, this device is recommended for use in medical equipment, surveillance systems, wireless systems and many other applications.

The working principle of BSS138K-13 is simple. When the gate voltage is positive, relative to the source, the device appears to be an open switch, allowing voltage to pass from drain to source. When the gate voltage is negative relative to the source, the device appears to be a closed switch, blocking current from passing from drain to source.

In order to further understand the inner workings of BSS138K-13, one must first understand the fundamentals of FETs. FETs are three-terminal, long-channel devices exhibiting a high degree of input impedance and a low output impedance. The input terminal is called the gate, the output terminal is called the drain and the third terminal is called the source. The typical operation of an FET involves applying a voltage to the gate, depending on whether it is a voltage-controlled device or a current-controlled device. When the voltage or current exceeds a certain threshold, known as the threshold voltage or the pinch-off voltage, the device becomes conductive and current is allowed to flow.

BSS138K-13 is a single N-channel enhancement-mode FET. Enhancement mode devices operate by increasing the applied gate voltage until the device is either turned “on” or “off”. In the “on” state the device is conducting, allowing current to flow from the drain to the source. In the “off” state, the device is non-conducting, blocking current from passing from drain to source.

BSS138K-13 is a popular single N-Channel enhancement-mode FET that is used in a wide range of applications. Its features such as ESD protection, VGs signal level control, and low RON, provide superior current flow and conduction for electronics. Its versatile applications have helped make it an invaluable device for use in many different scenarios.

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