BSS138K Allicdata Electronics

BSS138K Discrete Semiconductor Products

Allicdata Part #:

BSS138KTR-ND

Manufacturer Part#:

BSS138K

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 50V 220MA SOT-23-3
More Detail: N-Channel 50V 220mA (Ta) 350mW (Ta) Surface Mount ...
DataSheet: BSS138K datasheetBSS138K Datasheet/PDF
Quantity: 42000
Stock 42000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
Base Part Number: BSS138
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 58pF @ 25V
Vgs (Max): ±12V
Series: --
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 50mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSS138K MOSFET is one of the latest generation of single-gate field effect transistors (FETs). It is a mature, reliable, small-size FET technology that has become increasingly popular in various applications. It has become increasingly popular due to its high current gain and low on-resistance. The BSS138K has a footprint of a mere 3 mm2 and is capable of various types of applications due to its excellent characteristics.

In terms of structure, the BSS138K MOSFET consists of two depletion-mode devices, a p-type substrate, and a metal layer. A gate terminal is wired to the top of the p-substrate and connected to a ruthenium contact. The ruthenium contact is then connected to body contacts, which are connected to the bulk of the FET. The backside of the FET is connected to the source, which is connected to the bulk contacts. This structure allows the BSS138K to be used as an ideal complemented N-type and P-type transistor.

The working principle of a BSS138K FET is fairly simple yet highly effective. It works similar to a switch, with the gate controlling how current flows through the device. When the gate voltage is high, the transistor is on or conducting. When the gate voltage is low, the transistor is off or non-conducting. This effectively allows the user to control the current flow through the FET to the rest of the circuit.

The BSS138K MOSFET has a wide range of applications, particularly in switching applications. The FET has a low on-resistance which allows it to quickly switch on and off, making it great for high-speed switching applications. The FET is also relatively immune to changes in temperature, making it suitable for automotive applications such as controls. This makes it great for power-supply systems and general signal switching.

In addition, the BSS138K MOSFET can also be used for DC/DC conversions and audio signal switching. In DC/DC converters, the FET maximizes efficiency by providing low switching losses and fast response times. For audio signals, the FET provides high-quality audio amplification, making it great for audio amplifiers. The FET can also be used for other power management applications such as LED drivers, and automotive entertainment systems.

The BSS138K MOSFET is an excellent choice for many applications due to its small size, excellent characteristics, and wide range of applications. It is easy to use and highly reliable and can be used in switching applications, DC/DC conversions, audio signal switching, and other power management systems. Its unique structure allows it to be used as an ideal complemented transistor, and its small size makes it ideal for smaller applications.

The specific data is subject to PDF, and the above content is for reference

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