BSS169 E6327

Vgs(th) (Max) @ Id:	1.8V @ 50µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds:	68pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	2.8nC @ 7V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	6 Ohm @ 170mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	0V, 10V
Current - Continuous Drain (Id) @ 25°C:	170mA (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSS169 E6327 Application Field and Working Principle

BSS169 E6327 is a N-type Channel Enhancement Mode Vertical DMOS FET (VFET). It is designed specifically for low voltage application operating down to 1.8V and up to 5.5. BSS169 E6327 utilizes a single enhancement mode DMOS design which provides high electrical stability and low drain to source on-state resistance. It is constructed using the innovative vertical DMOS array to minimize the on-resistance and device capacitance.BSS169 E6327 is often employed in various automotive applications like engine control, transmission control and body control. This device is also suitable for off-line and DC-DC converters, solenoid and relay drivers and audio amplifier applications. Its wide voltage range and proven robustness make BSS169 E6327 a great choice for power control and signal buffering circuits.The working principle of BSS169 E6327 is relatively simple and is based on the same principles of a typical MOSFET. The device consists of two MOSFETs with their sources connected together. When a gate voltage is applied, the device turns on and allows current to flow from drain to source. The gate voltage is controlled by the current on the control electrode and the voltage threshold is fixed by the gate-source junction breakdown voltage.The Drain-Source structure of BSS169 E6327 is composed of a P-Channel type of MOSFET on top of a N-Channel type of MOSFET. The gate of the two devices is connected together and they operate in complementary symmetry. When a positive voltage is applied to the gate, the N-Channel MOSFET turns on, allowing current to flow from the Drain to the Source. At the same time the P-Channel MOSFET is turned off, disallowing current conduction from the source to the drain.BSS169 E6327 is a very useful device as it allows for low-voltage operation and low resistance when in an ‘ON’ state. The device features a fast switching speed and wide operating temperature range, which makes it an excellent choice for automotive applications. BSS169 E6327 is also an ideal choice for applications that demand low resistance and low voltage operation. By utilizing its low-voltage and low-resistance capabilities, BSS169 E6327 provides an power efficient solution for power control applications.

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