BSS139 E6906

Vgs(th) (Max) @ Id:	1V @ 56µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds:	76pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.5nC @ 5V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	14 Ohm @ 0.1mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	0V, 10V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

BSS139 and E6906 are both single-level insulated field-effect transistors (FETs) produced by NXP. They are designed to operate at high frequencies and appropriate for electronic circuits that require low capacitance, low on-state resistance, and fast switching. Both transistors are highly reliable and require low input power.

About BSS139 and E6906

The BSS139 and E6906 as single-level insulated FETs have many applications, such as in high current switching, high frequency switching and amplification applications. They can also be used in industrial automation, telecom, and consumer electronics.The BSS139 is a Nchannel enhancement-mode lateral FET with a maximum on-state resistance of 0.2 ohms, a maximum gate threshold voltage of 2.7 V, and a maximum drain current of 350 milliamperes (mA). The E6906 is also an N-channel enhancement-mode lateral FET but with a maximum on-state resistance of 0.16 ohms, a maximum gate threshold voltage of 2.6 V, and a maximum drain current of 400mA.

Key Differentiating Factors

The key differentiating factor between the BSS139 and E6906 is the drain current, where the E6906 has a higher drain current of 400mA compared with 350mA of the BSS139. This is due to the E6906 using a more advanced production process with a wider gate size and improved gate resistance.In terms of speed, the maximum breakdown voltage for the BSS139 is 30V and the maximum drain-source breakdown voltage for the E6906 is 40V. This means that the E6906 can operate at higher voltages, which translates to faster switching speeds.In terms of the threshold voltage, the maximum gate threshold voltage for the BSS139 is 2.7V whereas the maximum gate threshold voltage for the E6906 is only 2.6V. This feature gives the E6906 slightly lower turn-on time and will enable the higher-frequency operation.

Working Principle

The BSS139 and E6906 are both insulated field-effect transistors. They work by using electric fields to control the movement of electrons between the gate, drain and source terminals. When a voltage is applied to the gate, an electric field is generated which ‘captures’ electrons from the source and drags them towards the drain. This process is known as inversion and it is this process which controls the current flow through the circuit.The gate voltage acts as a ‘gate keeper’ that controls the level of the electric field and determines how much current will flow through the circuit. By controlling the electric field, the gate voltage controls how much current flows through the circuit.

Conclusion

In conclusion, the BSS139 and E6906 are both single-level insulated field-effect transistors that are designed for high frequency switching applications. The key differentiating factor between the two is the drain current, where the E6906 offers a higher drain current of 400mA compared to the 350mA provided by the BSS139. The transistors have fast switching speeds and low input power requirements, making them ideal for high-performance switching applications.

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