| Allicdata Part #: | BSS123WTR-ND |
| Manufacturer Part#: |
BSS123W |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 0.17A SOT-323 |
| More Detail: | N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount... |
| DataSheet: | BSS123W Datasheet/PDF |
| Quantity: | 12000 |
| 1 +: | $ 0.05600 |
| 10 +: | $ 0.05432 |
| 100 +: | $ 0.05320 |
| 1000 +: | $ 0.05208 |
| 10000 +: | $ 0.05040 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 200mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 71pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSS123W is a N-Channel JFET (Junction Field-Effect Transistor). It is a three-terminal semiconductor device that is commonly used as a voltage-controlled switch and amplifier. The JFET has two p-type semiconductor layers (blocks) separated by a n-type semiconductor material, creating a voltage barrier. When operated, the junction will either be open or closed, depending on the polarity of the applied voltage.
BSS123W is a type of constant-current JFET, meaning that it can be used to control a range of current levels in electronic circuits. It has low input bias current and low input capacitance. In addition, the BSS123W is capable of operating over a wide range of temperature and power levels, making it an ideal choice for many applications.
The BSS123W JFET is primarily used in logic circuits and power electronics. Its most common application is in Toggle Switches within logic circuits, which are used to control the output of a transistor or other active component. It can also be used in P-channel MOSFETs and N-channel MOSFETs, which are popularly used in power electronics and micro controllers. BSS123W is also used in analog electronics for voltage level detection, signal amplification, stabilization, and filtering.
The working principle of the BSS123W is based on the principle of electrostatic control. The applied voltage will cause a corresponding electric field to be created across the junction layer, which in turn creates an electric potential difference between the two p-type blocks. This electric potential difference will cause electrons to be pushed out of the n-region, thereby creating a "depletion area". Because of this, the current will be limited and only allow a certain amount of charge carriers to pass across the junction. As the applied voltage is increased, the electric field will also increase, resulting in a further increase in the current.
In general, the BSS123W is an ideal component for a wide variety of switch, filter, and amplifier applications in both industrial and consumer-electronics applications. It is easy to use, reliable and relatively low cost, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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BSS123W Datasheet/PDF