BSS139H6906XTSA1 Allicdata Electronics
Allicdata Part #:

BSS139H6906XTSA1-ND

Manufacturer Part#:

BSS139H6906XTSA1

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 250V 100MA SOT223
More Detail: N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount...
DataSheet: BSS139H6906XTSA1 datasheetBSS139H6906XTSA1 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.16549
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 1V @ 56µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 76pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSS139H6906XTSA1 Application Field and Working Principle

BSS139H6906XTSA1 is a single MOSFET that has been designed to offer reliable and high efficiency power management between different circuits in different applications. The device has been specifically optimized to work in applications such as DC-DC converters, power conversion systems and protection circuits.

Performance Features

The BSS139H6906XTSA1 has several performance features that make it ideal for a variety of applications. These include:

  • Advanced trench structure that provides low on-resistance and high breakdown voltage;
  • High current and low power consumption;
  • FS immunity with a reverse body diode that reduces current spikes;
  • Compact package which allows for easier mechanical assembly;
  • Pb-free and RoHS compliant.

Working Principle

The BSS139H6906XTSA1 is a metal-oxide-semiconductor field-effect transistor (MOSFET) which works based on the principle of voltage control of the current. In such transistors, the electric current is controlled by the voltage applied to the gate terminal. When the gate is powered, it creates a channel from the source to the drain, allowing the current to flow.

The source and the drain terminals of the MOSFET are used to drive the current in the opposite direction. The gate is the control terminal, i.e. it controls the amount of current that flows between the source and the drain. The current is controlled by varying the voltage applied to the gate terminal. The voltage required to trigger the current flow is called the threshold voltage.

When the BSS139H6906XTSA1 is reverse biased, i.e. when the voltage applied to the gate is negative, the current flowing between the source and the drain is blocked. This is known as the ‘OFF-state’.

The BSS139H6906XTSA1 has an advanced trench structure, which ensures that the device has a low on-resistance and high breakdown voltage. This feature makes it an ideal choice for applications where large currents need to be switched with reduced power dissipation.

Applications

BSS139H6906XTSA1 offers a number of featured that make it suitable for various applications. These include:

  • Power Management: The device can be used in DC/DC converters and power conversion systems, as well as in automotive power control systems.
  • Protection Circuits: BSS139H6906XTSA1 MOSFETs can be used in overcurrent and overvoltage protection circuits.
  • Data and Telecommunication: BSS139H6906XTSA1 transistors can be used in systems requiring high levels of signal precision, such as signal conditioning and line clamps.

Conclusion

The BSS139H6906XTSA1 single MOSFET offers a variety of features and performance characteristics that make it suitable for a number of applications in different industries. With its low on-resistance and high breakdown voltage, the device can offer reliable and high efficiency power management, making it an ideal choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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