
Allicdata Part #: | BSS139H6906XTSA1-ND |
Manufacturer Part#: |
BSS139H6906XTSA1 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 100MA SOT223 |
More Detail: | N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.16549 |
Vgs(th) (Max) @ Id: | 1V @ 56µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 76pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 5V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS139H6906XTSA1 Application Field and Working Principle
BSS139H6906XTSA1 is a single MOSFET that has been designed to offer reliable and high efficiency power management between different circuits in different applications. The device has been specifically optimized to work in applications such as DC-DC converters, power conversion systems and protection circuits.
Performance Features
The BSS139H6906XTSA1 has several performance features that make it ideal for a variety of applications. These include:
- Advanced trench structure that provides low on-resistance and high breakdown voltage;
- High current and low power consumption;
- FS immunity with a reverse body diode that reduces current spikes;
- Compact package which allows for easier mechanical assembly;
- Pb-free and RoHS compliant.
Working Principle
The BSS139H6906XTSA1 is a metal-oxide-semiconductor field-effect transistor (MOSFET) which works based on the principle of voltage control of the current. In such transistors, the electric current is controlled by the voltage applied to the gate terminal. When the gate is powered, it creates a channel from the source to the drain, allowing the current to flow.
The source and the drain terminals of the MOSFET are used to drive the current in the opposite direction. The gate is the control terminal, i.e. it controls the amount of current that flows between the source and the drain. The current is controlled by varying the voltage applied to the gate terminal. The voltage required to trigger the current flow is called the threshold voltage.
When the BSS139H6906XTSA1 is reverse biased, i.e. when the voltage applied to the gate is negative, the current flowing between the source and the drain is blocked. This is known as the ‘OFF-state’.
The BSS139H6906XTSA1 has an advanced trench structure, which ensures that the device has a low on-resistance and high breakdown voltage. This feature makes it an ideal choice for applications where large currents need to be switched with reduced power dissipation.
Applications
BSS139H6906XTSA1 offers a number of featured that make it suitable for various applications. These include:
- Power Management: The device can be used in DC/DC converters and power conversion systems, as well as in automotive power control systems.
- Protection Circuits: BSS139H6906XTSA1 MOSFETs can be used in overcurrent and overvoltage protection circuits.
- Data and Telecommunication: BSS139H6906XTSA1 transistors can be used in systems requiring high levels of signal precision, such as signal conditioning and line clamps.
Conclusion
The BSS139H6906XTSA1 single MOSFET offers a variety of features and performance characteristics that make it suitable for a number of applications in different industries. With its low on-resistance and high breakdown voltage, the device can offer reliable and high efficiency power management, making it an ideal choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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