Allicdata Part #: | BSS123LTR-ND |
Manufacturer Part#: |
BSS123L |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 0.17A SOT-23 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS123L Datasheet/PDF |
Quantity: | 33000 |
3000 +: | $ 0.02766 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21.5pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Field-effect transistor (FET) is a type of transistor which uses an electric field to control the conductivity of a semiconductor material. The FET is a very versatile electronic device and is used in a wide range of applications, from simple switching circuits to high-power amplifiers and digital processing. One of the most commonly used FETs today is the BSS123L.
The BSS123L is a single-channel FET specifically designed for high-voltage applications. It can withstand up to ±25V VGS (gate-source voltage) and 150V VDS (drain-source voltage), making it ideal for applications that require high voltage or high current. In addition, it offers a fast switching speed of 30ns, with very low on-resistance of only 0.013Ω for 50mA IDS (drain-source current).
Like all FETs, the BSS123L works by controlling the flow of electrons from the source (S) to the drain (D) through the channel region. When a positive gate voltage (VGS) is applied to the gate terminal, electrons are attracted to the gate, forming a “channel” between the source and drain. This in turn allows a current to flow between the source and drain, depending on the voltage applied. The main advantage of this type of device is that the gate-source voltage has a much lower impact on the drain-source voltage than in a BJT, making the FET much more stable in high-voltage applications.
The BSS123L is a great choice for applications that require high voltage and high current. Its fast switching speed and low on-resistance make it ideal for power amplifiers, motor control, and automotive electronics. It can also be used as a voltage regulator, voltage limiter, or switch in other applications where precise control of voltage and current is necessary.
In conclusion, the BSS123L is a versatile field-effect transistor that is well suited for a wide range of high-voltage applications. Its fast switching speed and low on-resistance make it ideal for power amplifiers, motor control, and automotive electronics. Its features make it an excellent choice for applications where precise control of voltage and current is necessary.
The specific data is subject to PDF, and the above content is for reference
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